Copper/polyimide Materials System for High Performance Packaging

Jensen, Ronald J.; Cummings, Jennifer A.; Vora, H.

doi:10.1109/tchmt.1984.1136378

Cited by 138 publications

(18 citation statements)

References 6 publications

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“…dvanced microelectronic packaging technology A promises to realize full advantage of the dramatic progress in integrated circuits by minimizing the interconnection length and delay time. Copper polyimide multichip module (MCM) fabrication has been an active research area for almost a decade (1,2). Achieving high wiring densities with relatively thick multiple conductor layers (linewidths of 8 to 15 pm, spaces of 25 pm, and thicknesses of 5 to 10 pm) imposes many strict constraints on the materials and fabrication process.…”

Section: Introductionmentioning

confidence: 99%

Pre‐imidized photoimageable polyimide as a dielectric for high density multichip modules

Cech

Burnett

Knapp

1992

Polymer Engineering & Sci

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Issues relating to the fabrication of complex multichip modules were investigated from a manufacturability perspective. The use of a preimidized photosensitive polyimide reduces the number of processing steps, thus making it a desirable dielectric material. Factors influencing the polyimide resolution, stress, and feature profile were studied both by experimentation and modeling. Thermal cure cycles for polyimide baking were optimized for solvent resistance, polyimide mechanical properties, and process throughput. Studies were also done on polyimide interactions with metal depositions, including adhesion and polyimide surface damage. Results of this research are shown as embodied in a fabricated 1.4 Gbit/s optical transceiver multichip module.

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Section: Introductionmentioning

confidence: 99%

Pre‐imidized photoimageable polyimide as a dielectric for high density multichip modules

Cech

Burnett

Knapp

1992

Polymer Engineering & Sci

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“…The skin effect becomes important in the high performance computer circuitries [18], [19] and superconductor transmission lines{13]- [15], [20]. In [14], the surface impedance for both the normal-state and the superconducting striplines are derived.…”

Section: Introductionmentioning

confidence: 99%

<title>Analysis of skin effect loss in high-frequency interconnects with finite metallization thickness</title>

Kiang

1991

SPIE Proceedings

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The skin effect of single and coupled conductor strips of finite thickness is analyzed using the dyadic Green's function and integral equation formulation. Galerkin's method is used to solve the integral equation for the dispersion characteristics. The effects of the geometrical and the electrical parameters on the conductor loss are investigated. Results are compared with literature, and shown to be in good agreement. This approach is very useful for analyzing the electrical properties of interconnects in high performance computer circuitries. INTRODUCTIONTo calculate the conductor loss of microstrip lines, a perturbation method has usually been used. The surface currents for the lossless case are obtained first by either a quasi-TEM approximation [1]-[3] or a full-wave approach [4]. Then, the conductor loss is evaluated by using the surface resistance and the surface current. By using the surface resistance approximation, it is assumed that the strip thickness is much larger than the skin depth.In [5], the equivalent surface impedance is used in the boundary condition from which an integral equation is derived. The conductor loss is then obtained by solving this integral equation. Similar to [4], it is assumed that the thickness of the strip is at least several skin depths, and is much smaller than the width of the strip. In [6}, a complex resistive boundary condition is applied to solve for the propagation constant of thin superconducting striplines. It is assumed that the strip is thin compared to the superconducting penetration depth.In [7] and [8], a skin loss expression is derived based on the incremental inductance rule which was first proposed by Wheeler [9]. In this technique, the thickness of the conductors exposed to the electric field should be greater than several skin depths. [12] have been used to calculate the conductor loss. These approaches are based on either an electrostatic scalar potential[3] or a magnetic vector potential[10]- [12]. In the magnetic vector potential approach, only the longitudinal current component is considered. In [10], the ac resistance is derived from the power loss calculated from the current distribution in the cross section. In [11], the thickness of the strip is assumed to be much smaller than the skin depth, and only surface current is considered. Finite element methods[3], [10]-In [13], a finite element method is used to calculate the attenuation constant of a copper microstrip at 77° K. The results are compared with the closed form solution obtained by neglecting the effect of fringing fields[14]. In [15], a phenomenological equivalence method is proposed for characterizing a planar quasi-TEM transmission line with a thin normal conductor or superconductor strip. This method is based on various empirical formulas valid under different conditions. In [16], a perturbation series and coupled integral equation approach is used to calculate the frequency-dependent resistance and inductance for quasi-TEM transmission lines with conductor strip of arbitrary cro...

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“…The PI dielectric constant compares favorably with that of silicon dioxide, and is about half that of silicon nitride.Although there are no reported values for PI-2575-D properties in th e literature, Jensen(5), Senturia(16, 17), and Cech(18) have also observed linear relationships between moisture gain (or dielectric constant) and relative humidity for other polyimides. ecsdl.org/site/terms_use address.…”

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confidence: 99%

Polyimide Film Properties and Selective LPCVD of Tungsten on Polyimide

Pattee

McConica

Baughman

1988

J. Electrochem. Soc.

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du Pont PI-2575-D polyimide films were characterized to determine their suitability for use as an interlevel dielectric with a selective tungsten via fill process. Polyimide films cured at 400 ~ and 440~ were found to breakdown at voltages greater than 1 • I0 ~ V/cm. The pinhole density, when processed in a non-cleanroom environment, is below 1 per cmz. The dielectric constant for 1.6 ~m films is 3.9. Adhesion to thermal oxide is 100% for films in boiling water up to lh. The maximum moisture absorption is 1.7 w/o at 90% relative humidity. Perfect tungsten selectivity was achieved in the absence of nearby tungsten surfaces at 216~ 0.75-7.5 torr total pressure, 15:1 H~:WFa and times to 210 rain. When the polyimide was exposed to adjacent tungsten surfaces, tungsten did deposit on the polyimide, resulting in a moving metal front. The activation energy for the rate of progress of the tungsten film front is 16 kcal/mol. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 134.117.10.200 Downloaded on 2015-06-14 to IP

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Copper/polyimide Materials System for High Performance Packaging

Cited by 138 publications

References 6 publications

Pre‐imidized photoimageable polyimide as a dielectric for high density multichip modules

Pre‐imidized photoimageable polyimide as a dielectric for high density multichip modules

<title>Analysis of skin effect loss in high-frequency interconnects with finite metallization thickness</title>

Polyimide Film Properties and Selective LPCVD of Tungsten on Polyimide

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