Copper Pulse-Reverse Current Electrodeposition to Fill Blind Vias for 3-D TSV Integration

Tian, Qing; Cai, Jian; Zheng, Jingan; Zhou, Can; Li, Junhui; Zhu, Wenhui

doi:10.1109/tcpmt.2016.2621759

Cited by 13 publications

(3 citation statements)

References 42 publications

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“…Ultrasound, vacuuming, and wetting treatments with various reagents and other treatments were investigated as pretreatments in their study. Xu et al [ 18 ] adopted a vacuum pretreatment method using methylsulfonate with methane sulfonic acid as the base electroplating solution. They have achieved 370-μm-deep TSV vias with a diameter of 60 μm with complete filling and high density based on bottom-up copper electroplating.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and Optimization of High Aspect Ratio Through-Silicon-Vias Electroplating for 3D Inductor

Liu

et al. 2018

Micromachines

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In this study, the filling process of high aspect ratio through-silicon-vias (TSVs) under dense conditions using the electroplating method was efficiently achieved and optimized. Pulsed power was used as the experimental power source and the electroplating solution was prepared with various additive concentrations. Designed control variable experiments were conducted to determine the optimized method. In the control variable experiments, the relationship of multiple experimental variables, including current density (0.25–2 A/dm2), additive concentration (0.5–2 mL/L), and different shapes of TSVs (circle, oral, and square), were systematically analyzed. Considering the electroplating speed and quality, the influence of different factors on experimental results and the optimized parameters were determined. The results showed that increasing current density improved the electroplating speed but decreased the quality. Additives worked well, whereas their concentrations were controlled within a suitable range. The TSV shape also influenced the electroplating result. When the current density was 1.5 A/dm2 and the additive concentration was 1 mL/L, the TSV filling was relatively better. With the optimized parameters, 500-μm-deep TSVs with a high aspect ratio of 10:1 were fully filled in 20 h, and the via density reached 70/mm2. Finally, optimized parameters were adopted, and the electroplating of 1000-μm-deep TSVs with a diameter of 100 μm was completed in 45 h, which is the deepest and smallest through which a three-dimensional inductor has ever been successfully fabricated.

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Section: Introductionmentioning

confidence: 99%

Fabrication and Optimization of High Aspect Ratio Through-Silicon-Vias Electroplating for 3D Inductor

Liu

et al. 2018

Micromachines

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“…The period pulse reverse (PPR) plating [13,14], in which cathodic pulses are followed by anodic pulses, is a promising technology to achieve uniform copper deposition in high aspect ratio holes [15][16][17][18]. The periodically reverse current could dissolve the overdeposited copper in the current crowding position (PTH entry or exit).…”

Section: Introductionmentioning

confidence: 99%

Ultra-Uniform Copper Deposition in High Aspect Ratio Plated through Holes via Pulse-Reverse Plating

Li³

et al. 2022

Coatings

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The uniformity and microstructure of the copper deposition in the high aspect ratio plated through holes (penetrating holes) are crucial for the performance of printed circuit board. We systematically investigated the effects of reverse pulse parameters in the period pulse reverse (PPR) plating on the uniformity and microstructure of the copper deposition, including reverse pulse frequency, reverse pulse duty cycle and reverse pulse current density. The Cu deposition behavior (throwing power) and its crystallographic characteristics, including grain size, crystallographic orientation, and grain boundary, were characterized by means of field-emission scanning electron microscopy (FE-SEM), X-ray diffractometer (XRD), and electron backscatter diffraction (EBSD). Our results clarify that the reverse pulse current density and duty ratio should be low to achieve the full filling and high uniformity of the through holes. The reverse pulse frequency of 1500 Hz would prevent the through holes to be fully filled. The copper electrodeposition in PTH prepared by double pulse electrodeposition has the good (111) surface texture and grain boundary distribution. This work demonstrated that the period pulse reverse (PPR) plating provides unique advantages in achieving the ultra-uniform copper deposition in the high aspect ratio plated through holes.

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“…As previously reported, ordinary electroplating cannot achieve a satisfactory effect on full filling due to the so high aspect ratio of TSVs [7]. Electroplating for vias was operated with difficulties, such as bonding the TSV wafer to an auxiliary wafer with seed layers [8], pretreating the wafers [9], adjusting the additives in the solution [10], using pulse-reverse current electrodeposition [11], and optimizing the models of simulation [12]. To optimize quality, additives including polyethylene glycol, bis-(3-sodiumsulfopropyl disulfide), and Janus Green B—used as suppressors, accelerators, and levelers, respectively—have been studied.…”

Section: Introductionmentioning

confidence: 99%

Improvement on Fully Filled Through Silicon Vias by Optimized Sputtering and Electroplating Conditions

Zhao¹

2019

Materials

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The high reliability of electroplating through silicon vias (TSVs) is an attractive hotspot in the application of high-density integrated circuit packaging. In this paper, improvements for fully filled TSVs by optimizing sputtering and electroplating conditions were introduced. Particular attention was paid to the samples with different seed layer structures. These samples were fabricated by different sputtering and treatment approaches, and accompanied with various electroplating profile adjustments. The images were observed and characterized by X-ray equipment and a scanning electron microscope (SEM). The results show that optimized sputtering and electroplating conditions can help improve the quality of TSVs, which could be interpreted as the interface effect of the TSV structure.

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Copper Pulse-Reverse Current Electrodeposition to Fill Blind Vias for 3-D TSV Integration

Cited by 13 publications

References 42 publications

Fabrication and Optimization of High Aspect Ratio Through-Silicon-Vias Electroplating for 3D Inductor

Fabrication and Optimization of High Aspect Ratio Through-Silicon-Vias Electroplating for 3D Inductor

Ultra-Uniform Copper Deposition in High Aspect Ratio Plated through Holes via Pulse-Reverse Plating

Improvement on Fully Filled Through Silicon Vias by Optimized Sputtering and Electroplating Conditions

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