Copper-related defects in silicon

Knack, S.

doi:10.1016/j.mssp.2004.06.002

Cited by 30 publications

(19 citation statements)

References 125 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As mentioned above sulfur ions incorporated in the silicon matrix introduce several levels in the silicon band gap and one of them is very close to the mid-gap (E C À 0.52 eV [52,53]). Moreover, sulfur may create metastable pairs with copper which behave similar to Cu I -Cu S pairs [54,55]. Thus, sulfur may act as an effective recombination center in the form of interstitial ions and Cu I -S pairs.…”

Section: Discussionmentioning

confidence: 99%

Factors limiting minority carrier lifetime in solar grade silicon produced by the metallurgical route

Osinniy

Bomholt

Larsen

et al. 2011

Solar Energy Materials and Solar Cells

View full text Add to dashboard Cite

Section: Discussionmentioning

confidence: 99%

Factors limiting minority carrier lifetime in solar grade silicon produced by the metallurgical route

Osinniy

Bomholt

Larsen

et al. 2011

Solar Energy Materials and Solar Cells

View full text Add to dashboard Cite

“…28,29 (6) The Cu PL defect dissociates following a 30-min anneal at 250 • C, and the amplitude of the DLTS peaks associated with Cu s increases. 30,31 If Cu is reintroduced into the sample, Cu PL reappears. Thus, the core of Cu PL must be or include, Cu s .…”

Section: Introductionmentioning

confidence: 99%

“…The in-diffusion of Cu from a metallic source must be followed by an anneal [above 400 • C, optimal at 700 • C (Ref. 31)]. The concentration of this center is estimated to be less than 0.1% of the equilibrium copper solubility at the diffusion temperature.…”

Section: Introductionmentioning

confidence: 99%

Four-copper complexes in Si and the Cu-photoluminescence defect: A first-principles study

2011

View full text Add to dashboard Cite

Complexes containing four Cu impurities in Si are systematically investigated using density functional theory. The complexes include various combinations of substitutional and interstitial copper. The structures, formation and binding energies, approximate gap levels, and vibrational spectra are calculated and the results compared to the measured properties of the Cu PL defect. The best candidate out of those investigated is the Cu s1 Cu i3 complex recently proposed by Shirai et al. [J. Phys: Condens. Matter 21, 064249 (2009)]. The estimated positions of the gap levels of Cu s1 Cu in , with n = 0, . . . ,3, suggest a straightforward explanation as to why only the defects Cu s and Cu s1 Cu i3 occur in high-resistivity material.

show abstract

“…1,2 Copper is the fastest diffusing transition metal in Si and reacts readily with native defects, dopants, and various impurities, including itself. [3][4][5] These interactions often affect the electrical and optical properties of the material. Photoluminescence ͑PL͒ and deep-level transient spectroscopy ͑DLTS͒ studies of copper pairs 4 in Si show the presence of two related defects labeled Cu 0 and * Cu 0 , respectively.…”

mentioning

confidence: 99%

“…[3][4][5] These interactions often affect the electrical and optical properties of the material. Photoluminescence ͑PL͒ and deep-level transient spectroscopy ͑DLTS͒ studies of copper pairs 4 in Si show the presence of two related defects labeled Cu 0 and * Cu 0 , respectively. Cu 0 has been identified as the substitutional-interstitial ͕Cu s ,Cu i ͖ pair, but * Cu 0 has yet to be identified.…”

mentioning

confidence: 99%

Cu0*: A metastable configuration of the{Cus,Cui}

2005

View full text Add to dashboard Cite

First-principles theory shows that the substitutional-interstitial copper pair in Si ͑Si-Cu s¯C u i ͒ has a metastable state with Cu i very near a tetrahedral interstitial site in a trigonal Cu s -Si¯Cu i configuration that exhibits three low-frequency pseudolocal vibrational modes. The lowest of them, at 40 cm −1 , has A 1 symmetry and is the likely source of the phonon sidebands observed at 52 cm −1 in the photoluminescence band of a defect known as * Cu 0 .

show abstract

Copper-related defects in silicon

Cited by 30 publications

References 125 publications

Factors limiting minority carrier lifetime in solar grade silicon produced by the metallurgical route

Factors limiting minority carrier lifetime in solar grade silicon produced by the metallurgical route

Four-copper complexes in Si and the Cu-photoluminescence defect: A first-principles study

Cu0*: A metastable configuration of the{Cus,Cui}

Contact Info

Product

Resources

About