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NRC Publications Archive Archives des publications du CNRCThis publication could be one of several versions: author's original, accepted manuscript or the publisher's version. / La version de cette publication peut être l'une des suivantes : la version prépublication de l'auteur, la version acceptée du manuscrit ou la version de l'éditeur. For the publisher's version, please access the DOI link below./ Pour consulter la version de l'éditeur, utilisez le lien DOI ci-dessous.http://dx.doi.org/10.1016/j.jssc.2013.02.002 Chemistry, 201, pp. 35-40, 2013-02-10 Characterization of carrier states in CuWO4 thin-films at elevated temperatures using conductometric analysis Gonzalez, Carlos M.; Dunford, Jeffrey L.; Du, Xiaomei; Post, Michael L. Abstract: CuWO 4 thin-films were deposited by pulsed laser deposition onto an insulating substrate. The temperature dependence of the electronic conductivity of CuWO 4 thin-films was determined over the 100 °C -500 °C temperature range in a synthetic air atmosphere. Additionally, variations of conductivity at 300°C and 500°C have been measured for oxygen partial pressures (0.1 atm < p(O 2 ) < 0.9 atm) in nitrogen. The apparent activation energy ∆E a for the electrical conduction has been estimated. The study of the temperature effect on the electron transport properties of CuWO 4 thin-films reveals the operation of two temperature-dependent oxygen states. The effect of varying oxygen concentration on the electronic properties is discussed in detail. The electrochemical nature of the operating oxygen states for the 100°C -500 °C temperature range is deduced using a physicochemical model that relates electronic conductivity with oxygen partial pressure and temperature.
Journal of Solid State
Characterization of Carrier States in CuWO