Copper Wire Bonding

Chauhan, Preeti; Choubey, Anupam; Zhong, Zhang; Pecht, Michael

doi:10.1007/978-1-4614-5761-9_1

Cited by 20 publications

(15 citation statements)

References 13 publications

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“…Recently, copper wire bonding appears to be the alternate materials and various engineering studies on copper wire development have been reported [1]. Technical barriers and reliability challenges of Cu wire bonding in microelectronics packaging are well identified [2][3][4][5][6][7][8][9][10][11]. Au-Al microstructure evolution and intermetallic compound (IMC) formation is widely studied by Karpel et al [12].…”

Section: Introductionmentioning

confidence: 99%

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Evolution and investigation of copper and gold ball bonds in extended reliability stressing

Gan

Francis²,

Chan³

et al. 2014

Gold Bull

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This paper discusses the microstructure evolution of copper (Cu) and gold (Au) ball bonds after various extended reliability stresses such as biased highly accelerated temperature and humidity test (HAST), unbiased highly accelerated temperature and humidity test (UHAST), temperature cycling (TC), and high temperature storage life (HTSL) in BGA package. Objective of this study is to study the microstructure evolution and changes after long hours and long cycles of component reliability stressing and its predicted failure mechanisms and to determine the long-term reliability comparison with combination of bonding wires in HAST, UHAST, and TC. Secondary electron microscopy (SEM) and energy dispersive X-ray (EDX) have been carried out to understand the respective microstructure of failed samples in HAST, UHAST, TC, and HTSL long-term reliability failures. Respective failure mechanisms of copper and gold ball bonds carrion under HAST and UHAST, ball bond lifting in TC and HTSL have been analyzed and proposed. The evolution of surface morphology, including copper and gold ball bond micro cracking, gold ball bond Kirkendall microvoiding and intermetallic compound (IMC) formation, was studied in FBGA package with copper and gold ball bonds during various reliability stresses. Biased HAST, UHAST, TC, and HTSL mechanisms were proposed to explain the observed morphological changes and the resulting ball bond wear out modes after extended reliability stresses. Weibull reliability analyses have been established to compare the performance of copper and gold ball bonds under humid and dry environmental tests.

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Section: Introductionmentioning

confidence: 99%

“…Void formation at the Al-Cu bonds heat-treated up to 200 h was not found to be a source of bond failure. Xu C et al [15] studied oxidation behavior of two types of bulk gold aluminides, AuAl 2 , and Au 4 Al, using thermogravimetry. Xu H et al [16,17] characterized behavior of aluminum oxide, intermetallics, and voids in Cu-Al wire bonds.…”

Section: Introductionmentioning

confidence: 99%

Evolution and investigation of copper and gold ball bonds in extended reliability stressing

Gan

Francis²,

Chan³

et al. 2014

Gold Bull

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“…[3] The overall reliability of Cu wire bonding is highly dependent on the metallurgical bond between the wire and pad/substrate since excessive IMC growth may result in reduced reliability. [6] Since the extent of interdiffusion between Cu wire and Al pad at the bonding interface during bonding at room temperature has found to be negligible, this study focuses on the Cu/Al IMC growth at elevated temperatures. [6] The Cu-Al binary phase diagram [7] suggests that the pos- CuAl while the initial layers were Cu and AlSiCu.…”

Section: Introductionmentioning

confidence: 99%

“…[6] Since the extent of interdiffusion between Cu wire and Al pad at the bonding interface during bonding at room temperature has found to be negligible, this study focuses on the Cu/Al IMC growth at elevated temperatures. [6] The Cu-Al binary phase diagram [7] suggests that the pos- CuAl while the initial layers were Cu and AlSiCu. [11] Therefore, the understanding of the sequence of IMC phase transformations at the Cu/Al bonds remains incomplete.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Formation and Growth Behavior of Cu/Al Intermetallic Compounds during Isothermal Aging

Mokhtari

Kim

Nishikawa

et al. 2014

Transactions of The Japan Institute of Electronics Packaging

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Wire bonding is a key technique for electrical interconnections between integrated circuit (IC) and the metal frame or printed circuit board (PCB). One of the most common wire bonding system is bonding of the Au wire to Al metallization, however, Cu wire is being considered as replacement for Au wire due to surge of Au price. This research focuses on the formation and growth behavior of Cu/Al intermetallic compounds (IMCs). In order to investigate IMC growth after 30, 60 and 120 min of aging at 270, 300 and 330°C, cross-section of Al, Cu and Cu/Al IMCs were examined by scanning electron microscopy (SEM). The results showed that the consumption of the Al layer is more rapid than that of Cu layer, and that after 120 min at 330°C the Al layer is entirely consumed. The formation of three distinct Cu/Al IMC layers was observed. Scanning transmission electron microscopy (STEM)/energy-dispersive X-ray spectroscopy (EDS) was used to identify the three IMC layers formed at the interface. In addition, the IMC compositions were identified by selected-area diffraction pattern (SAD). These were CuAl, Cu 3 Al 2 and Cu 9 Al 4 . Also, the activation energies of Cu/Al IMC growth were obtained from an Arrhenius plot.

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“…[1][2][3][4]. The overall reliability of Cu wire bonding is highly dependent on the metallurgical bond between the wire and pad/substrate since excessive IMC growth may result in reduced reliability [5].…”

Section: Introductionmentioning

confidence: 99%

Effect of isothermal aging on the growth behavior of Cu/Al intermetallic compounds

Mokhtari

Kim

Nishikawa

et al. 2014

2014 International Conference on Electronics Packaging (ICEP)

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This research focuses on the formation and growth behavior of Cu/Al intermetallic compounds (IMCs). In order to investigate IMC growth after 30, 60 and 120 min of aging at 270, 300 and 330 ˚C, cross-section of Al, Cu and Cu/Al IMCs were examined by scanning electron microscopy (SEM). The results showed that the consumption of the Al layer is more rapid than that of Cu layer, and that after 120 min at 330 ˚C the Al layer is entirely consumed. The formation of three distinct Cu/Al IMC layers was observed. Scanning transmission electron microscopy (STEM)/energy-dispersive X-ray spectroscopy (EDS) was used to identify the three IMC layers formed at the interface. These were CuAl, Cu 3 Al 2 and Cu 9 Al 4 . Also, the activation energies of Cu/Al IMC growth were obtained from an Arrhenius plot.

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Copper Wire Bonding

Cited by 20 publications

References 13 publications

Evolution and investigation of copper and gold ball bonds in extended reliability stressing

Evolution and investigation of copper and gold ball bonds in extended reliability stressing

Investigation of Formation and Growth Behavior of Cu/Al Intermetallic Compounds during Isothermal Aging

Effect of isothermal aging on the growth behavior of Cu/Al intermetallic compounds

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