Copropagating pump and probe experiments on Si-nc in SiO2 rib waveguides doped with Er: The optical role of non-emitting ions

Navarro-Urriós, D.; Lupi, Federico Ferrarese; Prtljaga, N.; Pitanti, Alessandro; Jambois, O.; Ramírez, J. M.; Berencén, Yonder; Daldosso, N.; Garrido, B.; Pavesi, L.

doi:10.1063/1.3665950

Cited by 8 publications

(6 citation statements)

References 19 publications

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“…Further increases in erbium concentration, such as in heavy doping, lead to a nonuniform distribution and erbium ions clustering 39 . Experimental results indicated that this increased concentration significantly reduced the population of optically active erbium ions 40 , complicating the realization of an adequate gain in waveguides within sub-millimeter length scales. Therefore, no net optical gain in the Er-doped Si-rich materials has yet been reported under electrical pumping.…”

Section: Er-related Light Sourcementioning

confidence: 99%

On-chip light sources for silicon photonics

2015

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Serving as the electrical to optical converter, the on-chip silicon light source is an indispensable component of silicon photonic technologies and has long been pursued. Here, we briefly review the history and recent progress of a few promising contenders for on-chip light sources in terms of operating wavelength, pump condition, power consumption, and fabrication process. Additionally, the performance of each contender is also assessed with respect to thermal stability, which is a crucial parameter to consider in complex optoelectronic integrated circuits (OEICs) and optical interconnections. Currently, III-V-based silicon (Si) lasers formed via bonding techniques demonstrate the best performance and display the best opportunity for commercial usage in the near future. However, in the long term, direct hetero-epitaxial growth of III-V materials on Si seems more promising for low-cost, high-yield fabrication. The demonstration of high-performance quantum dot (QD) lasers monolithically grown on Si strongly forecasts its feasibility and enormous potential for on-chip lasers. The superior temperature-insensitive characteristics of the QD laser promote this design in large-scale high-density OEICs. The Germanium (Ge)-on-Si laser is also competitive for large-scale monolithic integration in the future. Compared with a III-V-based Si laser, the biggest potential advantage of a Ge-on-Si laser lies in its material and processing compatibility with Si technology. Additionally, the versatility of Ge facilitates photon emission, modulation, and detection simultaneously with a simple process complexity and low cost.

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Section: Er-related Light Sourcementioning

confidence: 99%

On-chip light sources for silicon photonics

2015

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“…Recently, we have demonstrated that this is followed by the loss of light emission capability of Er 3+ when embedded in SRO material [11]. While the main fraction of embedded erbium ions does not participate in the process of light emission, absorption properties of non-emitting ions remain unaltered [12]. Evidently, this becomes a major obstacle toward population inversion in this material.…”

Section: Introductionmentioning

confidence: 99%

Limit to the erbium ions emission in silicon-rich oxide films by erbium ion clustering

Prtljaga¹,

Navarro-Urriós²,

Tengattini³

et al. 2012

Opt. Mater. Express

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Abstract:We have fabricated a series of thin (~50 nm) erbium-doped (by ion implantation) silicon-rich oxide films in the configuration that mitigates previously proposed mechanisms for loss of light emission capability of erbium ions. By combining the methods of optical, structural and electrical analysis, we identify the erbium ion clustering as a driving mechanism to low optical performance of this material. Experimental findings in this work clearly evidence inadequacy of the commonly employed optimization procedure when optical amplification is considered. We reveal that the significantly lower erbium ion concentrations are to be used in order to fully exploit the potential of this approach and achieve net optical gain.

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“…In case For Er 3+ doped waveguide, above a threshold pump power of 1550 mW.mm -2 , a positive gross gain is reached which increases up to 2 dB.cm -1 for the highest pump power density simulated. In order to estimate the net gain, we must account for the background losses such as those found experimentally by Navarro-Urrios et al 25 They found on comparable waveguide losses of about 3 dB.cm -1 at 1532 nm, making it impossible to reach a positive net gain in this range of pump power density. In case of Nd 3+ doped waveguide, we find that the optical gain remains positive over the whole power range and it increases up to 30 dB.cm -1 for the highest pump power of 10 4 mW.mm -2 .…”

Section: Resultsmentioning

confidence: 99%

Modeling of optical amplifier waveguide based on silicon nanostructures and rare earth ions doped silica matrix gain media by a finite-difference time-domain method: comparison of achievable gain with Er³⁺or Nd³⁺ions dopants

et al. 2015

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A comparative study of the gain achievement is performed in a waveguide optical amplifier whose active layer is constituted by a silica matrix containing silicon nanograins acting as sensitizer of either neodymium ions (Nd 3+ ) or erbium ions (Er 3+ ). Due to the large difference between population levels characteristic times (ms) and finite-difference time step (10 −17 s), the conventional auxiliary differential equation and finite-difference time-domain (ADE-FDTD) method is not appropriate to treat such systems. Consequently, a new two loops algorithm based on ADE-FDTD method is presented in order to model this waveguide optical amplifier. We investigate the steady states regime of both rare earth ions and silicon nanograins levels populations as well as the electromagnetic field for different pumping powers ranging from 1 to 10 4 mW.mm -2 . Furthermore, the three dimensional distribution of achievable gain per unit length has been estimated in this pumping range. The Nd 3+ doped waveguide shows a higher gross gain per unit length at 1064 nm (up to 30 dB.cm -1 ) than the one with Er 3+ doped active layer at 1532 nm (up to 2 dB.cm -1 ). Considering the experimental background losses found on those waveguides we demonstrate that a significant positive net gain can only be achieved with the Nd 3+ doped waveguide. The developed algorithm is stable and applicable to optical gain materials with emitters having a wide range of characteristic lifetimes.The FDTD method is based on time and space discretization scheme of Maxwell equations proposed by Yee 12 which allows to calculate the propagation of electromagnetic field (E,H) in time domain. 13 The ADE method consists in the use of extra terms such as current density J or polarization density P which are solutions

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Copropagating pump and probe experiments on Si-nc in SiO2 rib waveguides doped with Er: The optical role of non-emitting ions

Cited by 8 publications

References 19 publications

On-chip light sources for silicon photonics

On-chip light sources for silicon photonics

Limit to the erbium ions emission in silicon-rich oxide films by erbium ion clustering

Modeling of optical amplifier waveguide based on silicon nanostructures and rare earth ions doped silica matrix gain media by a finite-difference time-domain method: comparison of achievable gain with Er³⁺or Nd³⁺ions dopants

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Copropagating pump and probe experiments on Si-nc in SiO2 rib waveguides doped with Er: The optical role of non-emitting ions

Cited by 8 publications

References 19 publications

On-chip light sources for silicon photonics

On-chip light sources for silicon photonics

Limit to the erbium ions emission in silicon-rich oxide films by erbium ion clustering

Modeling of optical amplifier waveguide based on silicon nanostructures and rare earth ions doped silica matrix gain media by a finite-difference time-domain method: comparison of achievable gain with Er3+or Nd3+ions dopants

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Modeling of optical amplifier waveguide based on silicon nanostructures and rare earth ions doped silica matrix gain media by a finite-difference time-domain method: comparison of achievable gain with Er³⁺or Nd³⁺ions dopants