Correction to “Electrolyte-Gated WO<sub>3</sub> Transistors: Electrochemistry, Structure, and Device Performance”

Meng, Xiang; Quenneville, Francis; Venne, Frédéric; Mauro, Eduardo Di; Isik, Dilek; Barbosa, Martin Schwellberger; Drolet, Yves; Natile, Marta Maria; Rochefort, Dominic; Soavi, Francesca; Santato, Clara

doi:10.1021/acs.jpcc.5b09089

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Correction to “Electrolyte-Gated WO₃ Transistors: Electrochemistry, Structure, and Device Performance”

Abstract: The form of equation 1 in the original paper was incorrect. Equation 1 should be:ds ds ds(1)

Cited by 3 publications

References 0 publications

Transmittance correlated real-time resistivity modulation and insulator-metal transition of electrochromic WO3 thin films

Transmittance correlated real-time resistivity modulation and insulator-metal transition of electrochromic WO3 thin films

Temperature Dependent Electrical Characteristics of Nanostructured WO₃ Based Ambipolar Bottom Gate FET

Model-Based Experimental Investigation of Hydrogenase-Like Electrocatalytic Inactivation and Activation Mechanisms

Contact Info

Product

Resources

About

Correction to “Electrolyte-Gated WO3 Transistors: Electrochemistry, Structure, and Device Performance”

Abstract: The form of equation 1 in the original paper was incorrect. Equation 1 should be:ds ds ds(1)

Cited by 3 publications

References 0 publications

Transmittance correlated real-time resistivity modulation and insulator-metal transition of electrochromic WO3 thin films

Transmittance correlated real-time resistivity modulation and insulator-metal transition of electrochromic WO3 thin films

Temperature Dependent Electrical Characteristics of Nanostructured WO3 Based Ambipolar Bottom Gate FET

Model-Based Experimental Investigation of Hydrogenase-Like Electrocatalytic Inactivation and Activation Mechanisms

Contact Info

Product

Resources

About

Correction to “Electrolyte-Gated WO₃ Transistors: Electrochemistry, Structure, and Device Performance”

Temperature Dependent Electrical Characteristics of Nanostructured WO₃ Based Ambipolar Bottom Gate FET