Correction to Mobility Improvement and Temperature Dependence in MoSe₂ Field-Effect Transistors on Parylene-C Substrate

Abstract

The correct spelling of one of the authors should be "Di Xiao", instead of "Di Xaio".

Molecular Beam Epitaxy of Highly Crystalline MoSe2 on Hexagonal Boron Nitride

“…Reported electron mobilities of field-effect transistors (FETs) fabricated from the synthesized 2D MoSe 2 ranges from 0.02 to 95 cm 2 /(V s) 25,27,30,32−34 and for thicker samples of >10 nm, the mobilities range from 100 to 160 cm 2 /(V s). 35,36 However, the growth of such thick samples is of less significance since the desired two-dimensional properties only exist when MoSe 2 is a few layers thick. A comparison of the previous works on vaporphase growth of MoSe 2 is summarized in Table I.…”

Dynamic Control of Optical Response in Layered Metal Chalcogenide Nanoplates

“…The optical modulation behavior of Bi 2 Se 3 nanoplates from visible to near-infrared is mainly caused by a substantially altered effective optical bandgap, which is a result of the large free electron concentration modulation in the Bi 2 Se 3 nanoplates via EDL gating. This phenomenon is known as the Burstein–Moss shift . As the electron concentration increases, the Fermi level of the material rises into the conduction band, and empty states at the band edge become unavailable.…”

“…This phenomenon is known as the Burstein−Moss shift. 44 As the electron concentration increases, the Fermi level of the material rises into the conduction band, and empty states at the band edge become unavailable. Therefore, optical transitions to the bottom of the conduction band are less likely to occur, resulting in an increased effective bandgap.…”

Nonvolatile Memory Action Due to Hot-Carrier Charge Injection in Graphene-on-Parylene Transistors

“…11,12,28 Recent research on this material has extended its use from the biomedical field to that of nanoelectronics, where it performs better in ultrathin coatings compared to other parylene variants, and has been utilized in various transistors based on organic 29 and inorganic semiconductors 10 as well as different 2D materials. 17,30 In the latter studies, the use of parylene C as the underlying channel substrate was argued to result in improvements in mobility when compared to equivalent devices formed on SiO 2 substrates. 17,30 The focus in these reports, however, was largely on investigations of the small-signal characteristics of the FET, meaning that the response to the large driving signals that are required for practical applications was not investigated.…”

“…17,30 In the latter studies, the use of parylene C as the underlying channel substrate was argued to result in improvements in mobility when compared to equivalent devices formed on SiO 2 substrates. 17,30 The focus in these reports, however, was largely on investigations of the small-signal characteristics of the FET, meaning that the response to the large driving signals that are required for practical applications was not investigated.…”