Correction to Nanofilament Formation and Regeneration During Cu/Al₂O₃ Resistive Memory Switching

Abstract

R eference 15 is given incorrectly in the published paper.The correct citation reads: (15) Yang, Y.; Gao, P.; Gaba, S.; Chang, T.; Pan, X.; Lu, W.

Imaging Dielectric Breakdown in Valence Change Memory

“…A slant‐vertical Pt/HfO 2 /Ti VCM device (Figure 1) imaged in plan‐view affords a side‐on perspective of the switching region. [ 34 ] The top (Ti) and bottom (Pt) electrodes are both completely encased in HfO 2 , with a continuous HfO 2 layer separating them (see Section 1, Supporting Information). This architecture avoids the focused ion beam (FIB) sample preparation [ 12,14,22,28,29,32 ] often used to create cross‐sectional TEM samples, which introduces additional, compromising interfaces, structural damage, and chemical (e.g., gallium) contamination that have the potential to alter the DB process under study.…”

“…Although cation motion has been observed in valence change chemistries, [ 21 ] the absence of ADF contrast changes like those seen in ref. [34] with a similar device architecture indicates that few, if any, of the heavy nuclei in the sample are relocating as a result of the applied potential.…”

“…This architecture has previously revealed the movement of Cu atoms (atomic number Z = 29) in Cu/Al 2 O 3 conductive bridge memory (CBRAM) over multiple switching cycles. [ 34 ] However, the oxygen atom ( Z = 8), or, more precisely, vacancy movement thought to mediate VCM switching [ 6,7,9,15 ] is too subtle to be detected in an Hf ( Z = 72) background with standard TEM imaging. We therefore also image the slant‐vertical VCM devices using STEM EBIC imaging.…”

Tubular 3D Resistive Random Access Memory Based on Rolled‐Up h‐BN Tube

“…With the shrinking of semiconductor technology nodes, metal‐oxide‐semiconductor filed‐effect transistors based flash memory cells are approaching their physical limits, such as the exponentially increased leakage current and weak charges storage capability . On the contrary, resistive random access memory (RRAM) due to the reducible metal‐insulator‐metal (MIM) structure is considered as one of the most promising candidates for the next‐generation nonvolatile memory application with desirable scalability . Therefore, an RRAM device is the better choice for rolled‐up application.…”

“…[12] On the contrary, resistive random access memory (RRAM) due to the reducible metal-insulator-metal (MIM) structure is considered as one of the most promising candidates for the next-generation nonvolatile memory application with desirable scalability. [13][14][15][16] Therefore, an RRAM device is the better choice for rolled-up application. At present, many transition metal oxides (TMOs), such as Al 2 O 3 , [17,18] HfO 2 , [19,20] etc., have been found to have stable nonvolatile resistive switching ability in the planar MIM structure.…”