Correlated high-resolution x-ray diffraction, photoluminescence, and atom probe tomography analysis of continuous and discontinuous InxGa1−xN quantum wells

Abstract

Articles you may be interested inSurface plasmon enhanced spontaneous emission rate of InGaN ∕ GaN quantum wells probed by time-resolved photoluminescence spectroscopy Appl. Phys. Lett.Effects of growth interruption on the optical and the structural properties of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition

Combined SEM-CL and STEM investigation of green InGaN quantum wells

“…Other than increasing the QW growth temperature, a temperature ramp between the growth of QW and quantum barrier could provide a similar thermal budget for the removal of some QW material to form GWWFs [10]. Introducing H 2 to the carrier gas during growth of the GaN barrier has also been shown to cause discontinuous QWs that are narrower and of lower indium content [26]. Additionally, as GWWFs are mostly aligned with the surface terrace edges [15], which are related to the substrate miscut, the formation of GWWFs can be affected by substrate miscut angles.…”

Fabrication of High Efficiency Green InGaN/GaN MicroLEDs by Modulating Potential Barrier Height of the Sidewall MQWs in V-Pits

“…In order to improve the quality and the uniform distribution of indium of MQWs, many researchers have reported the effect of the presence of H2 during the MQWs growth. Some researchers find that the presence of H2 during the MQWs growth will create smoother surface and enhanced photoluminescence (PL) [8], [9]. Ren et al reported that adopting the H2 pre-flow prior to the InGaN quantum well growth will make the interface smoother and enhance the PL intensity [10].…”

Origin of huge photoluminescence efficiency improvement in InGaN/GaN multiple quantum wells with low-temperature GaN cap layer grown in N2/H2mixture gas

“…8) However, our results and those of other groups show that the nominal IQE is dramatically improved when hydrogen is used either for GaN growth or interruption. 11,17) On the basis of the results of the previous TDPL characteristics analysis, it is reasonable to deduce that the high luminous efficiency of the hydrogen-treated sample originates from the alleviation of indium segregation and the reduction in defect density at the QW=QB upper interface, rather than gross thickness fluctuations.…”

“…Second, the initially grown GaN LT-cap layer only partially covers the InGaN well surface, and the indium atoms on the uncovered InGaN well surface may be removed or etched out by hydrogen during GaN LT-cap layer growth. 17) In addition, the upper interface has a higher indium content than does the bottom interface, 11) which may aggravate the decrease in the average indium content in InGaN wells. As a result, the presence of H 2 in GaN LT-cap layer growth may induce severe well thickness variation, as well as the reductions in the indium content and thickness of the InGaN well layer.…”

“…The broadening of FWHM comes from the severe thickness variations caused by the etching effect of hydrogen. 17) The TDPL characteristics of the two samples, namely, (a) integrated intensity and (b) peak energy, are presented in Fig. 3.…”