Correlated impurity complex in the asymmetric tunneling contact: an ideal system to observe negative tunneling conductivity

Abstract

We studied theoretically electron transport through the impurity complex localized between the tunneling contact leads by means of the generalized Keldysh diagram technique. The formation of multiple well pronounced regions with negative tunneling conductivity in the I-V characteristics was revealed. The appearance of negative tunneling conductivity is caused by the presence of both strong Coulomb correlations and the asymmetry of tunneling rates, which lead to the blockade of the electron transport through the system for a certain values of applied bias. The developed theory and obtained results may be useful for the application of impurity (dopant) atoms as a basic elements in modern nanoelectronic circuits.

Quantum interference effects in multi-channel correlated tunneling structures

“…In the case of large Coulomb interaction Green’s functions look as 57 Section 3 of the Supplementary Material shows how to calculate nonequilibrium occupation numbers and for the impurity atoms states. Using expressions ( 13 ) and ( 16 ) one can calculate tunneling conductance in the presence of strong Coulomb interaction.…”

Transport through a correlated polar side-coupled quantum dot transistor in the presence of a magnetic field and dissipation

“…The negative tunneling conductivity has been studied both experimentally 67 – 69 and also theoretically 70 , 71 . The recent work by Masolva et al 72 has demonstrated that the interplay between Coulomb correlations and the asymmetry in tunneling rates gives rise to negative tunneling conductivity.…”