Correlation between 1/f Noise Parameters and Random Telegraph Noise in 28-nm High-k/Metal Gate pMOSFETs with Embedded SiGe Source/Drain

Tsai, Shih Chang; Wu, S.; Chen, J.F.; Tsai, Kai-Shiang; Kao, Tsung Hsien; Yang, Cheng; Chen, C.G.; Lo, K.Y.; Cheng, Osbert; Fang, Yean–Kuen; Chang, Sue-Joan

doi:10.7567/ssdm.2013.ps-3-4

Cited by 1 publication

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“…Vice versa, the superposition of a great number of two state fluctuators corresponding to small devices with various relaxation times is seen as a 1/f noise. 40,41 The latter argument applies to RRAM filamentary devices where the effective volume contributing to operations is extremely small being limited to a fraction of CF undergoing structural transformations; similarly small is the number of contributing fluctuators corresponding to noises of not too low frequencies and revealing themselves via RTN signal. However, in extremely long time measurements, the number of significant fluctuators increases to include those with large relaxation times.…”

Section: Role Of Amorphycitymentioning

confidence: 99%

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A thermodynamic theory of filamentary resistive switching

Karpov,

Niraula,

Karpov

et al. 2017

Preprint

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We present a phenomenological theory of filamentary resistive random access memory (RRAM) describing the commonly observed features of their current-voltage characteristics. Our approach follows the approach of thermodynamic theory developed earlier for chalcogenide memory and threshold switches and largely independent of their microscopic details. It explains, without adjustable parameters, such features as the domains of filament formation and switching, voltage independent current in SET and current independent voltage in RESET regimes, the relation between the set and reset voltages, filament resistance independent of its length, etc. Furthermore, it expresses the observed features through the material and circuitry parameters thus paving a way to device improvements.

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Section: Role Of Amorphycitymentioning

confidence: 99%

“…Finally, we note that our above phenomenological theory is limited to the ohmic mechanism of conductivity setting aside possibilities of electron tunneling [65][66][67] that would change the results in Eq. (41). Therefore, we we would like to briefly describe the effects of quantum tunneling through the gap dielectric.…”

Section: Growth Of Insulating Gapmentioning

confidence: 99%