Correlation between electric-field-induced phase transition and piezoelectricity in lead zirconate titanate films

Abstract

We observed that electric field induces phase transition from tetragonal to rhombohedral in polycrystalline morphotropic lead zirconate titanate (PZT) films, as reported in 2011 for bulk PZT. Moreover, we evidenced that this field-induced phase transition is strongly correlated with PZT film piezoelectric properties, that is to say the larger the phase transition, the larger the longitudinal piezoelectric coefficient d 33,eff . Although d 33,eff is already comprised between as 150 to 170 pm/V, our observation suggests that one could obtain larger d 33,eff values, namely 250 pm/V, by optimizing the field-induced phase transition thanks to composition fine tuning.

Electric‐Field‐Driven Phase Transition Process in (K, Na, Li)(Nb, Ta, Sb)O3 Lead‐Free Piezoceramics

“…For example, a rhombohedral to orthorhombic ferroelectric‐ferroelectric phase transition occurring in (110) platelet of Pb(Mg 1/3 Nb 2/3 )O 3 crystal was induced by applying high electric field . Furthermore, a recent study demonstrated that the optimizing field‐induced phase transition in the morphotropic phase boundary (MPB) region was an effective approach to further improve the Pb(Zr, Ti)O 3 (PZT) film′s piezoelectric properties …”

“…8 Furthermore, a recent study demonstrated that the optimizing field-induced phase transition in the morphotropic phase boundary (MPB) region was an effective approach to further improve the Pb(Zr, Ti)O 3 (PZT) film 0 s piezoelectric properties. 11 However, lead-based ceramics have been confirmed to cause serious damage to the environment and human beings, thus it is urgent to explore nontoxic alternatives with superior electrical performances. With the development of leadfree piezoelectric materials in the past decades, K 0.5 Na 0.5 NbO 3 (KNN) is considered as one of the most promising candidates for replacing Pb-containing materials in future electronic devices since Saito et al amazingly discovered PZT-like properties associated with the MPB or polymorphic phase transition (PPT) near room temperature in (Li, Ta, Sb)-doped KNN textured ceramics.…”

Adsorbate Screening of Surface Charge of Microscopic Ferroelectric Domains in Sol–Gel PbZr0.2Ti0.8O3 Thin Films

“…PbZr 0.2 Ti 0.8 O 3 (PZT) thin films (56 nm thick) were deposited on the Pt(100 nm)/TiO 2 (20 nm)/SiO 2 (500 nm)/Si substrate by the sol−gel method. 19 A Si wafer is chosen so that the process is as compatible as possible with the current semiconductor technology. The PbZr 0.2 Ti 0.8 O 3 stoichiometry was chosen to maximize the FE response of the material.…”

Temperature dependence of field‐responsive mechanisms in lead zirconate titanate

“…Field‐induced phase transitions have been reported to occur close to phase boundaries, which could induce an additional ferroelectric phase or change the phase fraction between the ferroelectric phases and lead to high piezoelectric properties in ferroelectric systems. In situ XRD measurements are often used to explore the field‐induced‐phase transition behavior in ferroelectrics . However, most in situ XRD studies are completed at, or near, room temperature due to limitations in the experimental setup.…”

“…In situ XRD measurements are often used to explore the field-induced-phase transition behavior in ferroelectrics. [18][19][20][21][22][23] However, most in situ XRD studies are completed at, or near, room temperature due to limitations in the experimental setup. Consequently, only limited selection of ferroelectric compositions can be used to study the field-induced-phase transition at room temperature since the phenomenon can only be observed close to phase boundaries.…”