Correlation Between Electromigration-Related Void Volumes and Time-to-Failure by High Resolution X-Ray Tomography and Modeling

Moreau, S.; Fraczkiewicz, Alexandra; Bouchu, D.; Bleuet, Pierre; Cloetens, Peter; Silva, Júlio César da; Manzanarez, H.; Lorut, F.; Lhostis, S.

doi:10.1109/led.2019.2945089

Cited by 11 publications

(3 citation statements)

References 13 publications

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“…On Cu-Cu direct bonding, a low thermal budget in lowering the bonding temperature to 250 • C and bonding time to 1 min are the key requirements to be adopted in advanced electronic packaging for high-density interconnects (<10 µm bump diameter) [15][16][17][18][19][20]. However, with the high current stressing in Cu-Cu interconnects, EM takes place again in interconnects, as well as in lines of the redistribution layer (RDL) [21][22][23][24].…”

Section: Introductionmentioning

confidence: 99%

“…The EM damages of Cu-Cu interconnects include void formation at Cu/SiO 2 and Cu/adhesion layer interfaces and Cu-Cu bonding interfaces [22,25]. The reason of void formation at interfaces can be referred from the EM of Cu damascene structures [26][27][28][29][30], but voids at the bonding interface have not been well discussed.…”

Section: Introductionmentioning

confidence: 99%

“…The reason of void formation at interfaces can be referred from the EM of Cu damascene structures [26][27][28][29][30], but voids at the bonding interface have not been well discussed. Although there have been previous studies of EM in Cu-Cu interconnects [22], the effect of bonding strength has not been mentioned.…”

Section: Introductionmentioning

confidence: 99%

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Effect of Bonding Strength on Electromigration Failure in Cu–Cu Bumps

Shie

Hsu

et al. 2021

Materials

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In microelectronic packaging technology for three-dimensional integrated circuits (3D ICs), Cu-to-Cu direct bonding appears to be the solution to solve the problems of Joule heating and electromigration (EM) in solder microbumps under 10 μm in diameter. However, EM will occur in Cu–Cu bumps when the current density is over 106 A/cm2. The surface, grain boundary, and the interface between the Cu and TiW adhesion layer are the three major diffusion paths in EM tests, and which one may lead to early failure is of interest. This study showed that bonding strength affects the outcome. First, if the bonding strength is not strong enough to sustain the thermal mismatch of materials during EM tests, the bonding interface will fracture and lead to an open circuit of early failure. Second, if the bonding strength can sustain the bonding structure, voids will form at the passivation contact area between the Cu–Cu bump and redistribution layer (RDL) due to current crowding. When the void grows along the passivation interface and separates the Cu–Cu bump and RDL, an open circuit can occur, especially when the current density and temperature are severe. Third, under excellent bonding, when the voids at the contact area between the Cu–Cu bump and RDL do not merge together, the EM lifetime can be more than 5000 h.

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