Correlation between growth pits, optical and structural properties of AlGaN/GaN high‐electron‐mobility transistors on 4″ silicon substrate

Khai, Pum Chian; Suzue, Takaaki; Sakai, Yusuke; Selvaraj, S. Lawrence; Egawa, Takashi; Jimbo, Takashi

doi:10.1002/pssc.200983468

Cited by 3 publications

(2 citation statements)

References 8 publications

(8 reference statements)

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“…15) In addition, surface pits affect the leakage current and the 2DEG characteristics. 16,17) Thereafter, we grew the AlGaN/GaN/ AlN DH-HEMT structure as shown in Fig. 4(a).…”

Section: Resultsmentioning

confidence: 99%

Growth behavior of GaN on AlN for fully coalesced channel of AlN-based HEMT

Choi

Lee

Kwak

et al. 2019

Jpn. J. Appl. Phys.

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We investigated the growth behavior of GaN grown on AlN along with V/III ratio and pressure variation, and found out the lateral growth regime for the fully coalesced channel layer of the AlN-based double-hetero structure high electron mobility transistor (HEMT). When the V/III ratio increases and pressure decreases, compressive stress in the GaN channel increases, and pit formation occurs to release the stress. The AlN-based HEMT structure was grown and the device was fabricated with an optimized channel layer. The two-dimensional electron gas mobility, sheet density, and sheet resistance were 1480 cm2 V−1 s−1, 1.32 × 1013 cm−2, and 319 Ω/sq., respectively, at room temperature. The device was characterized; direct current output result showed that the maximum current was ∼620 mA mm−1, on-resistance was 6.4 Ω mm, transconductance was ∼140 mS mm−1, and current on/off ratio was ∼104, respectively.

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“…15) In addition, surface pits affect the leakage current and the 2DEG characteristics. 16,17) Thereafter, we grew the AlGaN/GaN/ AlN DH-HEMT structure as shown in Fig. 4(a).…”

Section: Resultsmentioning

confidence: 99%

Growth behavior of GaN on AlN for fully coalesced channel of AlN-based HEMT

Choi

Lee

Kwak

et al. 2019

Jpn. J. Appl. Phys.

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“…In that case, however, a lattice mismatch with the substrate leads to large strain and its relaxation via defect formation in the layers, which in turn aects the properties of devices. In particular, it is well known that mobility of two-dimensional electron gas (2DEG) may be seriously limited by dislocations, interface roughness or deformation potential [1].…”

Section: Introductionmentioning

confidence: 99%

Influence of Substrate on Crystallographic Quality of AlGaN/GaN HEMT Structures Grown by Plasma-Assisted MBE

et al. 2012

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Results of characterization of AlGaN/GaN high electron mobility transistor (HEMT) structures grown by plasma-assisted molecular beam epitaxy (PAMBE) are reported. High resolution X-ray diraction (HRXRD) and X-ray reectivity (XRR) were applied to show that structural properties of the AlGaN/GaN layers strongly depend on the substrate used for growth. It has been found that an additional 10 µm thick HVPE GaN layer grown on a commercial GaN/sapphire substrate signicantly improves structural quality of AlGaN layer. However, the best structural parameters have been obtained for the HEMT sample grown on free-standing HVPE bulk GaN substrate.

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