Correlation between in-field Jc enhancement and grain connectivity in co-doped MgB2 superconductor

Barua, Shaon; Patel, Dipak; Alzayed, Nasser S.; Shahabuddin, Mohammed; Parakkandy, Jafar M.; Shah, M. Shahabuddin; Ma, Zongqing; Mustapić, Mislav; Hossain, Md. Shahriar A.; Kim, Jung Ho

doi:10.1016/j.matlet.2014.09.076

Cited by 17 publications

(1 citation statement)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Co-doping with nano-Ho 2 O 3 results in the formation of HoB 4 in these samples which improves the flux-pinning properties and hence improves the Jc-B behaviour of naphthalene doped sample further to that of pure sample (MBN0H0). We have compared the J C values obtained in the present case with the recent reports by Yang et al, 31 Silva et al, 32 Hossain et al, 33 Sudesh et al, 34 Barua et al, 35 and Rahul et al 36 The results show that the obtained J C values in the present case is at par with data available in international literature.…”

Section: Resultssupporting

confidence: 76%

Doping effect of nano-Ho2O3 and naphthalene in MgB2 superconductor prepared by powder-in-sealed-tube method

Hansdah

Sarun

2015

Journal of Applied Physics

View full text Add to dashboard Cite

Dependence of magnetoelectric properties on sintering temperature for nano-SiC-doped MgB2/Fe wires made by combined in situ/ex situ process J. Appl. Phys. 111, 07E135 (2012); 10.1063/1.3677660Effect of thermal strain on Jc and Tc in high density nano-SiC doped MgB2Effect of combined addition of nano-SiC and nano-Ho 2 O 3 on the in-field critical current density of MgB 2 superconductorThe effect on crystal structure, critical temperature (T C ), and critical current density (J C ) of bulk MgB 2 doped with nano-Ho 2 O 3 and naphthalene was studied. Among all the samples studied, the sample doped with 2.5 wt. % nano-Ho 2 O 3 have shown the best field dependent critical current density [J C (H)], i.e., 0.77 Â 10 5 A/cm 2 at 2 T and 10 K. While naphthalene doped MgB 2 sample has shown the least J C (H) characteristics. The improved J C (H) characteristics in the nano-Ho 2 O 3 doped MgB 2 samples are attributed to improved flux pinning properties due to the formation of HoB 4 and in naphthalene doped MgB 2 samples. The slight lower T C value (37.01 K) in naphthalene doped samples is attributed to the occurrence of lattice defect by the substitution of carbon at boron site of MgB 2 superconductor. Lower DT C value implies the lesser anisotropy in all the synthesized samples. The flux pinning force density (F P /F Pmax ) curves are theoretically analyzed using Dew-Hughes model. The result revealed that point pinning is the dominant pinning mechanism for nano-Ho 2 O 3 doped MgB 2 samples, while, surface and grain boundary pinning become dominant with increasing naphthalene addition in nano-Ho 2 O 3 doped MgB 2 samples. V C 2015 AIP Publishing LLC. [http://dx.

show abstract