Correlation between interfacial structure and c-axis-orientation of LiNbO3 films grown on Si and SiO2 by electron cyclotron resonance plasma sputtering

Precipitation kinetics of LiNbO3 and LiNb3O8 crystalline phases in thermally annealed amorphous LiNbO3 thin films

“…We employed electron-cyclotron-resonance (ECR) plasma sputtering to deposit LiNbO 3 films [2,3]. Since the cylindrical target and the substrate in this apparatus are positioned so that high-energy ions and neutrals are not directly incident to the substrate, plasma damage to the growing film is minimized.…”

Enhancement in crystalline quality of LiNbO3 films by slow annealing at low temperatures

“…Among the variety of methods for producing epitaxial films, viz. sol-gel process, sputtering, metal organic chemical vapor deposition, molecular beam epitaxy [5][6][7][8], the pulsed laser deposition (PLD) can yield crack-free, dense films with stoichiometry corresponding to that of the target material [9,10]. However, epitaxial growth of LN films with PLD is still a challenge due to the appearance of secondary phases, such as the Li-deficient phase and the Li-rich phase [11,12].…”

Influence of substrate temperature on the growth and optical waveguide properties of oriented LiNbO3 thin films

“…Up to now, numerous techniques have been used to deposit LiNbO 3 thin films, including sputtering [2,3], liquid-phase epitaxy (LPE) [4], sol-gel process [5,6], metal organic chemical vapor deposition (MOCVD) [7,8] and pulsed laser deposition (PLD) [9][10][11][12][13]. Among these techniques, PLD has been shown to be very appropriate for the complex oxide films deposition due to its intrinsic feature of easily transferring the target stoichiometry to the substrate.…”