Correlation between magnetoimpedance and permeability in La2/3Ba1/3MnO3

Hu, Jifan; Qin, Hongwei; Li, Bo; Wang, Yifei

doi:10.1016/j.jmmm.2010.12.046

Cited by 17 publications

(2 citation statements)

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“…8 It should be taken into account, however, that the ac magnetotransport will be additionally affected by magnetic permeability, microstructure, topology, and composition of multilayer structures and materials. For example, in the magnetic tunnel junction with MgO barriers, the ac tunneling magnetoresistance was consistent with its dc value, but the magnetocapacitance was found to be larger than expected should one do the extraction based on the junction geometry only.…”

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The bias-controlled giant magnetoimpedance effect caused by the interface states in a metal-insulator-semiconductor structure with the Schottky barrier

Волков

Tarasov

Smolyakov

et al. 2014

Applied Physics Letters

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Articles you may be interested inRole of the dielectric for the charging dynamics of the dielectric/barrier interface in AlGaN/GaN based metalinsulator-semiconductor structures under forward gate bias stress Appl. Phys. Lett. 105, 033512 (2014); 10.1063/1.4891532 Extremely large magnetoresistance induced by optical irradiation in the Fe/SiO2/p-Si hybrid structure with Schottky barrier Electrical properties of metal-insulator-semiconductor structures with silicon nitride dielectrics deposited by low temperature plasma enhanced chemical vapor deposition distributed electron cyclotron resonance J. Vac. Sci. Technol. A 15, 3143 (1997); 10.1116/1.580859Metal-insulator-semiconductor structure on GaAs using a pseudomorphic Si/GaP interlayer J.We demonstrate that ferromagnetic metal/insulator/semiconductor hybrid structures represent a class of materials with the giant magnetoimpedance effect. In a metal-insulator-semiconductor diode with the Schottky barrier fabricated on the basis of the Fe/SiO 2 /n-Si structure, a drastic change in the impedance in an applied magnetic field was found. The maximum value of this effect was observed at temperatures of 10-30 K in the frequency range of 10 Hz-1 MHz where the ac magnetoresistance and magnetoreactance ratios exceeded 300% and 600%, respectively. In the low-frequency region (<1 kHz), these ratios could be controlled in wide range by applying bias to the device. The main contribution to the impedance when measured at temperatures corresponding to the strongest magnetic-field sensitivity comes from the interface states localized near the SiO 2 /n-Si interface and the processes of their recharging in an applied ac voltage. The applied magnetic field changes the energy structure of the interface states, thus affecting the processes of the charging dynamics. V C 2014 AIP Publishing LLC. [http://dx.

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confidence: 99%

The bias-controlled giant magnetoimpedance effect caused by the interface states in a metal-insulator-semiconductor structure with the Schottky barrier

Волков

Tarasov

Smolyakov

et al. 2014

Applied Physics Letters

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“…However, for annealing temperature at 575 and 600°C, the magnetoimpedance (∆Z/Z) max decreases, due to the precipitation of Fe 2 B phase in the annealed ribbons. For the ribbons or plate, the expression of resistance and reactance at high frequencies where skin effect is strong can be expressed as [12]…”

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confidence: 99%

Giant Magnetoimpedance in Fe73.5Cu1Nb2V1Si13.5B9 Nanocrystalline Ribbons

Yang

Gao

et al. 2014

MSF

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In the present work, the giant magnetoimpedance effect has been found in Fe73.5Cu1Nb2V1Si13.5B9 nanocrystalline ribbons. The optimum annealing temperature for obtaining largest GMI is about 550°C. Fe73.5Cu1Nb2V1Si13.5B9 with average grain size of 15 nm after annealing at 550°C for 30 min presents a magnetoimpedance of-74% at 700 kHz under H=90 Oe. The MI effect at high frequency is due to the change of Z via the variation of permeability or the penetration depth under the external field. The positive magnetoimpedance ΔZ/Z is 36% and positive magnetoresistance ΔR/R is 79% at H= 10 Oe and f=5MHz. We observe a huge magnetoreactance ΔX/X of –375% at a very low frequency of 50 kHz, which is a magnetoinduction effect due to the movement of domain wall. The smaller GMI for nanocrystalline Fe73.5Cu1Nb2V1Si13.5B9 ribbons annealed above 550°C is mainly connected with the decrease of permeability due to the precipitation of Fe2B phase in ribbons. Our results show that the partial substitution of expensive Nb by cheap V in FeCuNbSiB could be a successful way to prepare the GMI materials with high performance and low cost.

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