Correlation between nanostructure and electron emission characteristics of a ballistic electron surface-emitting device

Ichihara, Tsutomu; Baba, T.; Komoda, Tsugikazu; Koshida, Nobuyoshi

doi:10.1116/1.1710489

Cited by 25 publications

(11 citation statements)

References 9 publications

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“…9 In atmospheric pressures, especially in air, the current induced oxidation of the nc-Si layer would produce the interfacial defects resulting in electron trap and scattering loss. The multiple tunneling along the nanodot chains is a key factor for stable ballistic transport and emission.…”

Section: Resultsmentioning

confidence: 99%

Emission characteristics of nanocrystalline porous silicon ballistic cold cathode in atmospheric ambience

Ohta

Kojima

Koshida

2007

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Section: Resultsmentioning

confidence: 99%

Emission characteristics of nanocrystalline porous silicon ballistic cold cathode in atmospheric ambience

Ohta

Kojima

Koshida

2007

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…Energetic electrons are generated via multiple-tunnel transport through a chain of nc-Si dots interconnected with thin oxide films. [1][2][3][4] The mean energy of emitted electrons is strongly affected by the nanostructure in the device where chainlike nc-Si structures are produced along columnar poly-Si grains. In the well-controlled device, the current-voltage (I-V) curves behave in the way expected from the tunneling mode with little scattering energy losses.…”

Section: Introductionmentioning

confidence: 99%

“…In the well-controlled device, the current-voltage (I-V) curves behave in the way expected from the tunneling mode with little scattering energy losses. 3 The electron emission characteristics are insensitive to vacuum pressure, thus it can be driven in a gaseous atmosphere. This feature makes it possible to apply the nc-Si cathode to discharge devices such as fluorescent lamps.…”

Section: Introductionmentioning

confidence: 99%

Direct excitation of xenon by ballistic electrons emitted from nanocrystalline‐silicon planar cathode and vacuum‐ultraviolet light emission

Ichihara¹,

Hatai²,

Koshida³

2010

J Soc Info Display

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Abstract— To verify the possible use of energetic electrons for direct excitation of inert gas molecules, a nanocrystalline‐silicon (nc‐Si) planar ballistic emitter is operated in a high‐pressure xenon gas ambience. Under the pulse drive, vacuum‐ultraviolet (VUV) light emission is detected without any signs of discharge. The transient behavior of the VUV light emission properly corresponds to that of the nc‐Si emitter. In accordance with quantitative analyses of electron‐emission characteristics and the VUV output, the electron‐to‐photon conversion efficiency reaches 81% in the relatively efficient emitter case. The VUV output power is mainly determined from the number of electrons with energies compatible the with internal excitation of xenon. The emission spectrum observed at a pressure of 10 kPa shows peaks at 152 and 172 nm, which are thought to be originated from metastable Xe2* states. In contrast to the case of conventional impact ionization, no near‐infrared (NIR) peaks are seen in the spectrum. These results strongly suggest that the incidence of energetic electrons causes direct excitation of xenon molecules followed by radiative relaxation through intermediate states. The generated VUV light can be easily converted to visible light using a phosphor screen. As a discharge‐free VUV light emission, this phenomenon is potentially applicable to mercury‐free, high‐efficacy, and high‐stability flat‐panel light‐emitting device.

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“…The emission mechanism is based on the ballistic electron transport in the nc-Si layer, [3][4][5][6] where electrons are accelerated via multitunneling cascade followed by ejection into vacuum through a thin top contact. The mean energy of output electrons reaches 5-7 eV at applied voltages of 15-20 V. This nc-Si ballistic planar emitter has several advantages: ͑i͒ highly energetic and directional emitted electrons; 7 ͑ii͒ compatibility with silicon planar processing at low temperatures; ͑iii͒ relatively low operating voltage; ͑iv͒ insensitivity to vacuum pressure; 8 ͑v͒ quick dynamic response; 9 and ͑vi͒ availability for emitter array fabrication on large-area glass substrate.…”

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confidence: 99%

Thin Cu Film Deposition by Operation of Nanosilicon Ballistic Electron Emitter in Solution

Ohta

Gelloz

Koshida

2010

Electrochem. Solid-State Lett.

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A thin solid-film deposition scheme is presented based on electron injection from a planar ballistic cold emitter into a metal-salt solution. Under the emitter operation in CuSO 4 solutions without using any counter electrodes, thin polycrystalline Cu films are uniformly deposited on the emitting area due to the reduction of Cu 2+ ions at the interface. By using the device with patterned emission line windows, a thin Cu nanowire array can be fabricated in parallel. The effect presented here provides an advanced wet processing not only for metallization but also for the deposition of various thin solid films.As reported previously, 1,2 a nanocrystalline silicon ͑nc-Si͒ diode uniformly emits quasi-ballistic electrons in vacuum under a biased condition. The emission mechanism is based on the ballistic electron transport in the nc-Si layer, 3-6 where electrons are accelerated via multitunneling cascade followed by ejection into vacuum through a thin top contact. The mean energy of output electrons reaches 5-7 eV at applied voltages of 15-20 V. This nc-Si ballistic planar emitter has several advantages: ͑i͒ highly energetic and directional emitted electrons; 7 ͑ii͒ compatibility with silicon planar processing at low temperatures; ͑iii͒ relatively low operating voltage; ͑iv͒ insensitivity to vacuum pressure; 8 ͑v͒ quick dynamic response; 9 and ͑vi͒ availability for emitter array fabrication on large-area glass substrate. 10 The nc-Si ballistic emitter has versatile technological potentials in various media such as flat panel display 11 and parallel electronbeam lithography 12 in vacuum, negative ion source in air applicable to the latent image formation, 8 and vacuum-UV light emission by internal excitation of xenon molecules. 13 Another important opportunity is that the nc-Si ballistic emitter operates as an active electrode that supplies strongly reducing electrons into pure water 14 and aqueous solutions. 15 Under its simple operation without using any counter electrodes, hydrogen gas is generated by the reduction of H + ions and/or H 2 O molecules at the emitting area with no by-product such as oxygen. To further confirm the reducing effect of energetic electron injection into the solutions, the nc-Si emitter is driven in metal-salt aqueous solutions. Under the operation in a CuSO 4 solution, thin Cu films are uniformly deposited on the emitting surface. As a novel deposition scheme of thin solid films, this technique is applied to parallel Cu nanowiring. ExperimentalThe nc-Si ballistic emitter is composed of a thin Au film, an anodized nc-Si layer, a polycrystalline Si ͑poly-Si͒, and an n + -type Si substrate, as shown in Fig. 1. The poly-Si film ͑1.6 m thick͒ was formed on n + -Si wafer by the low pressure chemical vapor deposition. The nc-Si layers were formed by conventional photoanodization in an ethanoic HF solution ͑55% HF: ethanol = 1:1͒ under illumination by a 500 W tungsten lamp from a distance of 20 cm. The anodization current was sequentially modulated at three cycles, at 2.5 mA/cm 2 for 2 s and 25 mA/c...

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Correlation between nanostructure and electron emission characteristics of a ballistic electron surface-emitting device

Abstract: Articles you may be interested inSub-50 nm resolution surface electron emission lithography using nano-Si ballistic electron emitter

Cited by 25 publications

References 9 publications

Emission characteristics of nanocrystalline porous silicon ballistic cold cathode in atmospheric ambience

Emission characteristics of nanocrystalline porous silicon ballistic cold cathode in atmospheric ambience

Direct excitation of xenon by ballistic electrons emitted from nanocrystalline‐silicon planar cathode and vacuum‐ultraviolet light emission

Thin Cu Film Deposition by Operation of Nanosilicon Ballistic Electron Emitter in Solution

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