Correlation between nucleation, morphology and residual strain of InN grown on Ga-face GaN (0001)

Dimakis, E.; Tsagaraki, K.; Iliopoulos, E.; Komninou, Ph.; Kehagias, Th.; Delimitis, A.; Georgakilas, A.

doi:10.1016/j.jcrysgro.2005.01.034

Cited by 13 publications

(3 citation statements)

References 12 publications

(20 reference statements)

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“…The presence of (1 0 1) reflection involved a re-orientation of crystalline grains [16]. A similar observation was also reported by Dimakis et al [17].…”

Section: (A) and (B)supporting

confidence: 82%

X-ray characterization at growth temperatures of InxGa1−xN growth by MOVPE

Ninoi

Kamiya

et al. 2011

Journal of Crystal Growth

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“…The presence of (1 0 1) reflection involved a re-orientation of crystalline grains [16]. A similar observation was also reported by Dimakis et al [17].…”

Section: (A) and (B)supporting

confidence: 82%

X-ray characterization at growth temperatures of InxGa1−xN growth by MOVPE

Ninoi

Kamiya

et al. 2011

Journal of Crystal Growth

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“…Lattice spacing of InN (0 0 0 2) is estimated to be 5.687 Å from the Bragg angle. This value is somewhat smaller than those previously reported [1,[5][6][7][8][9][10][11]. This discrepancy can be partly explained by in-plane tensile strain due to the misfit strain between 3C-SiC (1 1 0) and InN (1 1 0 0).…”

Section: Methodsmentioning

confidence: 57%

RF-MBE growth of InN/InGaN quantum well structures on 3C–SiC substrates

Hirano

Inoue

Shikata

et al. 2007

Journal of Crystal Growth

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“…every 10.40 {1010} planes of GaN or 9.40 {1010} planes of InN in average, respectively, for that particular sample. The compressive strain induced by the InN/GaN lattice mismatch was found to be effectively accommodated by these interfacial misfit dislocations [9,10].…”

Section: Resultsmentioning

confidence: 99%

Raman and transmission electron microscopy characterization of InN samples grown on GaN/Al₂O₃ by molecular beam epitaxy

Arvanitidis

Katsikini

Ves

et al. 2006

Physica Status Solidi (b)

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Raman spectroscopy and transmission electron microscopy were employed to study the vibrational properties and the microstructure of epitaxially grown InN films on GaN/Al 2 O 3 templates. The variations of the InN lattice constants, as deduced by electron diffraction analysis, along with the red-shifted 2 2 E mode frequency reveal that InN films exhibit residual tensile stress, strongly dependent on the epilayer growth temperature. Threading dislocations are the dominant structural defects in the films, having a density in the order of 10 9 -10 10 cm -2. Profile analysis of the 2 2 E Raman peak by means of the Spatial Correlation Model provides useful information concerning the effective mean length for free phonon propagation (L), which is a measure of the structural quality of the samples. In all the studied samples, L monotonically increases with decreasing threading dislocation density of pure screw and mixed type character.

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Correlation between nucleation, morphology and residual strain of InN grown on Ga-face GaN (0001)

Cited by 13 publications

References 12 publications

X-ray characterization at growth temperatures of InxGa1−xN growth by MOVPE

X-ray characterization at growth temperatures of InxGa1−xN growth by MOVPE

RF-MBE growth of InN/InGaN quantum well structures on 3C–SiC substrates

Raman and transmission electron microscopy characterization of InN samples grown on GaN/Al₂O₃ by molecular beam epitaxy

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Correlation between nucleation, morphology and residual strain of InN grown on Ga-face GaN (0001)

Cited by 13 publications

References 12 publications

X-ray characterization at growth temperatures of InxGa1−xN growth by MOVPE

X-ray characterization at growth temperatures of InxGa1−xN growth by MOVPE

RF-MBE growth of InN/InGaN quantum well structures on 3C–SiC substrates

Raman and transmission electron microscopy characterization of InN samples grown on GaN/Al2O3 by molecular beam epitaxy

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Raman and transmission electron microscopy characterization of InN samples grown on GaN/Al₂O₃ by molecular beam epitaxy