X-ray characterization at growth temperatures of InxGa1−xN growth by MOVPE

Continuous in situ X-ray reflectivity investigation on epitaxial growth of InGaN by metalorganic vapor phase epitaxy

“…In our previous work, we reported preliminary experiments involving X-ray CTR scattering, X-ray reflectivity (XRR), and X-ray diffraction measurements carried out at various In x Ga 1 À x N growth temperatures [6][7][8]. A combination of these techniques was successfully used to study In 0.09 Ga 0.91 N single quantum well (SQW) structures comprising several monolayers (1 ML ¼ 1⧸2 c-lattice constant) at 830 1C [9].…”

X‐ray investigations of GaInN single quantum wells grown by atomic layer epitaxy and metalorganic vapor phase epitaxy

“…2 Experimental methods Four samples of GaN/GaInN SQWs were grown on c-plane GaN/sapphire templates by Tokyo Electron using different growth machine made by EpiQuest Inc., and then they were brought to our machine [16] for the measurements at RT. We refer to these samples as #a, #b, #c, and #d, respectively, throughout this paper.…”