Correlation Between Oxide Trap Generation and Negative-Bias Temperature Instability

Boo, A. A.; Ang, Diing Shenp; Teo, Ziqiang; Leong, K. C.

doi:10.1109/led.2012.2185481

Cited by 20 publications

(44 citation statements)

References 15 publications

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“…This is within the measurement resolution of ΔVt.2 A much higher oxide field (> 13 MV/cm) could trigger a decrease of R, as shown in[8]. However, for the oxide field (∼8-10 MV/cm) examined in this work, such effect is negligible.…”

supporting

confidence: 72%

Evolution of Hole Trapping in the Oxynitride Gate p-MOSFET Subjected to Negative-Bias Temperature Stressing

Boo

Ang

2012

IEEE Trans. Electron Devices

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We present experimental evidence of a thermally activated transformation of negative-bias-temperature-stressinduced transient hole trapping at preexisting oxide traps into more permanent trapped holes in the ultrathin oxynitride gate p-MOSFET. The transformation is also shown to correlate with the generation of stress-induced leakage current, indicating that it is one of the key mechanisms of bulk trap generation. A similar observation (reported elsewhere) applies to the HfO 2 gate p-MOSFET, implying that the observed hole-trap transformation is a common mechanism for bulk trap generation across different gate oxide technologies. The results further imply that preexisting oxide defects, usually deemed irrelevant to negative-bias temperature instability, have a definite role on long-term device parametric drifts.Index Terms-Bias-temperature instability, MOSFET, oxygen vacancy, oxynitride, stress-induced leakage current (SILC).

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supporting

confidence: 72%

Evolution of Hole Trapping in the Oxynitride Gate p-MOSFET Subjected to Negative-Bias Temperature Stressing

Boo

Ang

2012

IEEE Trans. Electron Devices

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“…(a)(ii) An excellent linear correlation can be observed between the two. (b)(i) and (b)(ii) Similar results holds for the DNBTI-CVS testing described earlier(18),(22).…”

supporting

confidence: 80%

“…strongly suggests that the observed V t shift fluctuation is a result of the capture and emission of holes by a similar group of pre-existing oxide defects that always respond under a given experimental condition. As will be shown in this section, a gradual decrease of the V t shift recovery per cycle can be observed, especially under high oxide stress field and temperature (14), (16), (18), (20)- (22). We present evidence which shows that the decrease is a result of a part of the transient (recoverable) trapped holes being transformed into more permanent ones.…”

Section: Transient To Permanent Trapped-hole Transformationsupporting

confidence: 52%

“…We also summarize evidence which shows no apparent relationship between interface and bulk trap generation under NBTI stressing (19), in contrary to the hypothesis that ascribes bulk trap generation to hydrogen species released from the interface degradation or Si-H bond dissociation process (23), (24). This will be followed by a summary of results showing the transformation of transient hole trapping into more permanent trapped holes and its role on bulk trap generation (14), (16), (18), (20)- (22).…”

Section: Introductionmentioning

confidence: 85%

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(Invited) Negative-Bias Temperature Instability – Insight from Recent Dynamic Stress Experiments

2013

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The purpose of this paper is to summarize key experimental evidences on the important role of hole trapping on negative-bias temperature instability (NBTI). For a long time, the focus of this research topic had been on interface degradation driven by hydrogen transport and hole trapping was regarded as a side effect arising out of fast measurement techniques proposed to mitigate the effect of recovery on measurement data. In recent studies, we showed that the threshold voltage (V t ) fluctuations one typically observed under dynamic NBTI were mainly the result of hole trapping and not hydrogen-transport driven interface-state generation/passivation proposed earlier. In particular, the cyclical V t shifts and constant V t recovery are inconsistent with the basic principle of the hydrogen transport model. Such behaviors are better described in terms of hole trapping/detrapping at pre-existing oxide defects. We have also shown that interface degradation during NBTI stressing has no apparent impact on bulk (oxide) trap generation, i.e. interface trap generation does not lead to bulk trap generation. This result raises further questions on the validity of the hydrogen transport mechanism and the long standing hypothesis on hydrogen-induced bulk trap generation and gate oxide breakdown. Finally, it is shown that the transient hole trapping responsible for the V t shift fluctuations could be transformed into more permanent trapped holes under NBTI stressing. The extent of transformation is accelerated by a high oxide field and temperature. An excellent correlation with stress induced leakage current indicates that such transformation underlie the generation of bulk traps reported by earlier studies.

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“…One of the major challenges in modeling NBTI lies in its transient nature, which has been recently shown to be mainly linked to the capture and emission of holes by switching oxide traps (SOTs) under pulsed gate stressing [2]. Our recent studies [3]- [6] have suggested that a portion of the SOTs may be progressively transformed into a more permanent form. These studies were made on large area devices and the conclusion was drawn based on the decrease of the recoverable component of NBTI as dynamic stressing progresses.…”

Section: Introductionmentioning

confidence: 99%

Transient to temporarily permanent and permanent hole trapping transformation in the small area SiON P-MOSFET subjected to negative-bias temperature stress

Tung

Ang

2014

Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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Examining the drain current recovery traces of a small area SiON p-MOSFET subjected to repeated NBTI stress and relaxation cycling reveals direct evidence of transient to permanent hole trapping transformation inferred from previous studies on big area devices. The results show that the emission times of hole traps are not time-invariant (as normally presumed) but can increase due to evolution of the defect sites into more structurally stable forms. In addition, a new type of switching hole traps, exhibiting intermittent charging during stress and occasional increase in emission time by ~5 orders of magnitude, is observed.

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Correlation Between Oxide Trap Generation and Negative-Bias Temperature Instability

Cited by 20 publications

References 15 publications

Evolution of Hole Trapping in the Oxynitride Gate p-MOSFET Subjected to Negative-Bias Temperature Stressing

Evolution of Hole Trapping in the Oxynitride Gate p-MOSFET Subjected to Negative-Bias Temperature Stressing

(Invited) Negative-Bias Temperature Instability – Insight from Recent Dynamic Stress Experiments

Transient to temporarily permanent and permanent hole trapping transformation in the small area SiON P-MOSFET subjected to negative-bias temperature stress

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