Correlation between surface damage and micro-defects in Si covered with insulating layer by implantation of He and H ions

Liu, C.L.; Li, M.K.; Wang, Z.; Liao, Junqi; Zhang, D.C.; Zhang, X.L.; Shen, Youming

doi:10.1016/j.tsf.2011.01.101

Cited by 2 publications

(1 citation statement)

References 15 publications

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“…Implantation of light ions such as hydrogen and helium into semiconductors contributes to the blisters of free surface and defect microstructures of materials. Based on such phenomenon, the Smart Cut TM technology has been invented by Bruel to transfer a thin Si layer from a donor substrate to a handling substrate, leading to the production of high-quality silicon-on-insulator (SOI) wafers [1][2][3]. Many studies have provided evidence for the fact that after implantation and followed annealing, vacancies and hydrogen atoms in silicon can precipitate into nanoscale or microscale platelets and then grow up at length according to Ostwald ripening theory [4,5].…”

Section: Introductionmentioning

confidence: 99%

Effects of He+ and H+ Co-Implantation with High Energy on Blisters and Craters of Si and SiO2-On-Si Wafers

Rui

Lan

et al. 2019

Crystals

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In this paper, effects of He + and H + co-implantation with high implantation energy on surface blisters and craters at different annealing conditions are systematically investigated. Surface morphology as well as defect microstructure are observed and analyzed by various approaches, such as scanning electron microscopy (SEM), optical microscopy (OM), atomic force microscopy (AFM), and Raman spectroscopy. It is found that after 500 • C annealing and above for 1 h, surface blisters and exfoliation are observed for Si and SiO 2 -on-Si wafers except for the samples implanted with only He + ions. AFM images reveal that the heights of blisters in Si and SiO 2 -on-Si wafers are 432 nm and 397 nm respectively and the thickness of transfer layer is at the depth of about 1.4 µm, which is consistent with the projected range of He + and H + ions. Raman spectroscopy demonstrates that higher annealing temperature can lead to a stronger intensity of the VH 2 peak. Under the same implantation parameters, surface morphology of Si and SiO 2 -on-Si wafers is different after annealing process. This phenomenon is discussed in detail.

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Section: Introductionmentioning

confidence: 99%

Effects of He+ and H+ Co-Implantation with High Energy on Blisters and Craters of Si and SiO2-On-Si Wafers

Rui

Lan

et al. 2019

Crystals

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Effects of surface oxide layer on nanocavity formation and silver gettering in hydrogen ion implanted silicon

Naczas

Yaqoob

Huang

2013

Journal of Applied Physics

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We have made an investigation of the surface oxide effects on nanocavity formation in hydrogen implanted silicon and the influence of resultant nanocavities on diffusion and gettering of implanted silver atoms. A wafer with a 200-nm SiO2 surface layer was implanted with 22.5 keV H ions to a dose of 1 × 1017 cm−2, yielding the concentration peak of implanted H ions at ∼140 nm below the SiO2/Si interface. Subsequently, two sets of Si samples were prepared, depending on whether the oxide layer was etched off before (Group-A) or after (Group-B) post-H-implantation annealing. As evidenced by transmission electron microscopy, Group-A samples exhibited an array of large-sized nanocavities in hexagon-like shape, extending from the surface to the depth ∼140 nm, whereas a narrow band of sphere-shaped nanocavities of small size was present around 140 nm below the surface in Group-B samples. These Si samples with pre-existing nanocavities were further implanted with Ag ions in the surface region (∼40 nm projected range) and post-Ag-implantation annealing was conducted in the temperature range between 600 and 900 °C. Measurements based on Rutherford backscattering spectroscopy revealed much different behaviors for Ag redistribution and defect accumulation in these two sets of samples. Compared to the case for Group-B Si, Group-A Si exhibited a lower concentration of residual defects and a slower kinetics in Ag diffusion as well. We discuss the role of thick surface oxide in point defect generation and recombination, and the consequence on nanocavity formation and defect retention in Si. The properties of nanocavities, e.g., their depth distribution, size, and even shape, are believed to be responsible for the observed disparities between these samples, including an interesting contrast of surface vs. bulk diffusion phenomena for implanted Ag atoms.

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Correlation between surface damage and micro-defects in Si covered with insulating layer by implantation of He and H ions

Cited by 2 publications

References 15 publications

Effects of He+ and H+ Co-Implantation with High Energy on Blisters and Craters of Si and SiO2-On-Si Wafers

Effects of He+ and H+ Co-Implantation with High Energy on Blisters and Craters of Si and SiO2-On-Si Wafers

Effects of surface oxide layer on nanocavity formation and silver gettering in hydrogen ion implanted silicon

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