Correlation between Surface Morphological Defects and Crystallographic Defects in SiC

Hatakeyama, Tatsuko; Ichinoseki, Kyoichi; Yamaguchi, Hiroshi; Sugiyama, Naoyuki; Matsuhata, Hirofumi

doi:10.4028/www.scientific.net/msf.717-720.359

Cited by 9 publications

(7 citation statements)

References 5 publications

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“…A threading dislocation (TD), which either propagates from the substrate or originates at the emergence point of the substrate, leads to deterioration of device properties such as low breakdown voltage, reverse bias leakage and short life time. 4,5) Although TDs in 4H-SiC have been studied by X-ray topography coupled with etchpitting [6][7][8][9][10][11][12] or cathodoluminescence (CL) method, 13,14) the poor resolution of these methods has directed attention to the application of transmission electron microscopy (TEM). [15][16][17][18][19] Onda et al 19) using TEM have shown that, in addition to a threading edge dislocation (TED) of b ¼ 1=3h11 20i, the socalled threading screw dislocations (TSDs) can be categorized into three types, the Burgers vectors of which being b = [0001], 1=3h11 23i, and h01 11i, respectively.…”

Section: Introductionmentioning

confidence: 99%

Inclination of a threading dislocation in an epilayer of 4H-SiC

Saka

Watanabe

Kitou

et al. 2014

Jpn. J. Appl. Phys.

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Threading dislocations (TDs) are inclined from the [0001] c-axis in 4H-SiC epilayers which are produced by the step-controlled technique. The reason for this inclination is discussed in the framework of isotropic elastic theory of dislocation. The elastic strain energy of a TD in an epilayer is calculated as a function of its orientation, and the minimum energy orientation is used to predict the inclination angle. The results of the calculations are as follows. For a cut-off angle (α) of 4°, a threading edge dislocation (TED) and a threading pure screw dislocation (TpSD) are inclined from the c-axis by 12 and 2°, respectively: Threading near screw dislocations (TnSDs) and threading mixed dislocations (TMDs) are inclined by angles ranging from 8 to 15°from the c-axis, depending on their actual Burgers vectors. Similarly for α of 8°, a TED and a TpSD are inclined from the caxis by 21 and 4°, respectively: TnSDs and TMDs are inclined from the c-axis by angles ranging from 7 to 17°. These predictions are in good agreement with experiment.

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Section: Introductionmentioning

confidence: 99%

Inclination of a threading dislocation in an epilayer of 4H-SiC

Saka

Watanabe

Kitou

et al. 2014

Jpn. J. Appl. Phys.

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“…The lattice bending of grown crystals was examined by x-ray rocking curve measurements, which were performed using a double-axis diffractometer, where double crystal x-ray optics for Cu K D1 radiation is employed. The x-ray beam was incident on the (0001)Si or (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) surface of crystals, and the footprint size of the incident x-ray beam on the sample surface was about 1 mm square.…”

Section: Methodsmentioning

confidence: 99%

“…The epitaxial growth was performed in a horizontal hot-wall reactor on 4H-SiC(0001)Si substrates 8˚ off-oriented toward [11][12][13][14][15][16][17][18][19][20]. Silane (SiH 4 ) was used as the silicon source and ethylene (C 2 H 4 ) as the carbon source, with the carrier gas of hydrogen (H 2 ).…”

Section: Methodsmentioning

confidence: 99%

(Invited) Toward the Reduction of Performance-Limiting Defects in SiC Epitaxial Substrates

Ohtani

2011

ECS Trans.

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Reduction of the performance-limiting defects in SiC epitaxial substrates is indispensable to further penetration of SiC devices into the power device markets. This paper provides an opportunity to overview the current issues in SiC epitaxial substrates, focusing on dislocation-related problems. Structural defects such as threading screw dislocations (TSDs) and basal plane dislocations (BPDs) as well as surface morphological defects on the epitaxial layers due to dislocations are of current concern. The paper reviews recent important results regarding these defects from the viewpoint of crystal growth and discusses their causes and formation mechanisms.

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“…The 4H-SiC wafers with epitaxy film commercially available in the market were observed by Berg-Barrett X-ray topography, and the terminal end positions of threading-screw dislocations and threading-edge dislocations on the epitaxy film surface were detected. Moreover, we investigated the relationship between the epitaxy film and the surface morphology using an optical microscope, SEM, AFM, and so on [37]. We found some wafers contain pits shown in Fig.…”

Section: Time-dependent Dielectric Breakdown Of Mos Structure and Dismentioning

confidence: 99%

Analysis of Dislocation Structures in 4H‐SiC by Synchrotron X‐Ray Topography

Matsuhata¹,

Yamaguchi²,

Sekiguchi

et al. 2016

Electrical Engineering Japan

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SUMMARY Current 4H‐SiC wafers contain certain amount of dislocations, stacking faults, and other lattice‐defects. These defect structures evolve during various processes for power device fabrication. It is very important to examine evolutions of dislocation structures during power device processes, as well as the effect of dislocations on performances of fabricated power devices. Since lattice defects can be observed at only subsurface regions selectively by Berg–Barrett X‐ray topography, we have applied this useful observation technique to 4H‐SiC technology to solve various technological issues. Appearances of scratch‐like surface morphology after epi‐film growth on very flat substrate surface by chemomechanically polish were examined by this technique, and the mechanism was discussed. Analyses of dislocation structure evolutions during epi‐film growth and also basal‐plane dislocation glide by recombination of electrons and holes were discussed. Effects of threading‐screw dislocations on reliability of MOS structures and on current leakage in pn‐junction under reversed bias condition were investigated and discussed. Various important suggestions for 4H‐Sic industries were obtained.

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Correlation between Surface Morphological Defects and Crystallographic Defects in SiC

Cited by 9 publications

References 5 publications

Inclination of a threading dislocation in an epilayer of 4H-SiC

Inclination of a threading dislocation in an epilayer of 4H-SiC

(Invited) Toward the Reduction of Performance-Limiting Defects in SiC Epitaxial Substrates

Analysis of Dislocation Structures in 4H‐SiC by Synchrotron X‐Ray Topography

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