The dependences of the isomer shift d and the resonant absorption peak area S on the Te content (49.9-51.4 at%) in the SnTehIni semiconductor alloys at the fixed indium concentration (3 at%) were investigated at 300 K using the Mö ssbauer spectroscopy. Maxima of S and inflection points in the d curves were detected at the Te concentrations corresponding to the condition C In /C v ¼ 2, where C In and C v are the atomic concentrations of In and non-stoichiometric vacancies, respectively. The observed non-monotonous character of the d and S dependences on the degree of deviation from stoichiometry was attributed to the processes of recharging In impurity atoms (In 1+ ! In 3+ ) by introducing non-stoichiometric vacancies and formation of molecular complexes as a result of interactions between intrinsic defects and impurity atoms.