Correlation between the residual stress and the density of threading dislocations in GaN layers grown by hydride vapor phase epitaxy

Barchuk, M.; Röder, Christian; Shashev, Y.; Lukin, G.; Motylenko, Mykhaylo; Kortus, Jens; Pätzold, O.; Rafaja, David

doi:10.1016/j.jcrysgro.2013.09.041

Cited by 21 publications

(13 citation statements)

References 30 publications

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“…In hetero-epitaxial micrometre-thick GaN layers grown on foreign substrates, the lateral correlation length is usually assumed to be relatively large, and thus the TDs are considered to be the sole source of diffraction line broadening (Barchuk et al, 2010(Barchuk et al, , 2014Romanitan et al, 2017). However, such layers can be composed of vertical domains with inverse polarities that are separated by inversion domain boundaries (IDBs).…”

Section: Introductionmentioning

confidence: 99%

Effect of screw threading dislocations and inverse domain boundaries in GaN on the shape of reciprocal-space maps

et al. 2017

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The microstructure of polar GaN layers, grown by upgraded high-temperature vapour phase epitaxy on [001]-oriented sapphire substrates, was studied by means of high-resolution X-ray diffraction and transmission electron microscopy. Systematic differences between reciprocal-space maps measured by X-ray diffraction and those which were simulated for different densities of threading dislocations revealed that threading dislocations are not the only microstructure defect in these GaN layers. Conventional dark-field transmission electron microscopy and convergent-beam electron diffraction detected vertical inversion domains as an additional microstructure feature. On a series of polar GaN layers with different proportions of threading dislocations and inversion domain boundaries, this contribution illustrates the capability and limitations of coplanar reciprocal-space mapping by X-ray diffraction to distinguish between these microstructure features.

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Section: Introductionmentioning

confidence: 99%

Effect of screw threading dislocations and inverse domain boundaries in GaN on the shape of reciprocal-space maps

et al. 2017

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“…The (001)‐oriented GaN layers were characterized by X‐ray diffraction (XRD), micro‐Raman spectroscopy, and by transmission and scanning electron microscopies (TEM and SEM). The XRD measurements were carried out with CuK α1 radiation on a triple‐crystal Seifert/FPM diffractometer . They included the recording of RSMs 004 and 114 as well as the rocking curves (sample scans) 002 and 006.…”

Section: Methodsmentioning

confidence: 99%

“…The micro‐Raman measurements were performed at room temperature using a Labram HR 800 Horiba JobinYvon spectrometer . From the positions of the E 2 (high) mode, the residual stress was determined . As a reference value of the Raman shift for a non‐stressed lattice, the value of 567 cm −1 was used that was determined for GaN powder produced by parasitic growth in our HTVPE reactor …”

Section: Methodsmentioning

confidence: 99%

“…Microstructure defects like inversion domain boundaries and threading dislocations were visualized by transmission electron microscopy (TEM), which was done using a JEM‐2200FS from JEOL. The TEM samples were prepared using a precision ion polishing system (PIPS) . Bright field (BF) and dark field (DF) TEM images were recorded using a highly sensitive 2K × 2K CCD camera and handled using Digital Micrograph software from Gatan.…”

Section: Methodsmentioning

confidence: 99%

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Influence of Ammonia Flow on Microstructural Properties of Polar GaN Layers Grown by HTVPE on Sapphire Substrates

Barchuk

Motylenko

Lukin

et al. 2017

Crystal Research and Technology

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In this contribution, the correlation between the microstructure of thin gallium nitride films and the ammonia flow applied during their growth by high-temperature vapor phase epitaxy is described. The films were grown directly on (001)-oriented sapphire substrates. Their microstructure was investigated using high-resolution X-ray diffraction, electron microscopy and micro-Raman spectroscopy. The ammonia flow was found to affect the residual stress, the density of threading dislocations, the density of basal-plane stacking faults and the density of inversion domain boundaries. It is shown that the ammonia flow is an important parameter of the deposition process that can be used to reduce concurrently the residual stress and the density of microstructure defects.

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“…Nevertheless, the value of the strain in these samples varies with the direction of observation. Assuming a biaxial in‐plane stress acting on the layer, the resulting strain field for a hexagonal crystal like GaN, (0001) oriented along the z ‐axis, is such that the strain value ϵ χϕ at a given orientation ( χϕ ) is

ϵ_{χ ϕ} (z) = σ (z) ((S_{11} + S_{12} - 2 S_{13}) \sin^{2} χ + 2 S_{13})

where at a depth z , σ ( z ) is the biaxial in‐plane stress and ϵ χϕ is the resulting expansion or contraction of the lattice in a particular direction ( χϕ ). This direction is defined by an angle χ , which is its inclination with respect to the surface of the layer, and an angle ϕ around the normal of the surface.…”

Section: Theorymentioning

confidence: 99%

X‐Ray Diffraction Microstrain Analysis for Extraction of Threading Dislocation Density of GaN Films Grown on Silicon, Sapphire, and SiC Substrates

Yon

Rochat

Charles

et al. 2020

Physica Status Solidi (b)

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X‐Ray diffraction microstrain characterization is a technique which enables the quantification of threading dislocations by measuring the radial microstrain field surrounding these defects. This work demonstrates how to accurately perform these measurements on a broad range of GaN samples. In particular, for GaN grown on Si substrates with large stress gradient through the layer, the measurements need to be performed on the (20–25) reflection to avoid being affected by a macrostrain influence. A comparison of this characterization with cathodoluminescence and X‐ray diffraction lattice misorientations measurements shows differences in the measurement depth, so the results are affected by the various evolutions of dislocations densities through the layers of the different samples. Independently of the measurement depth, the analysis also highlights a dependence of the X‐ray measurements results on the type of sample, in particular the starting substrate. Microstrain measurements appear therefore as being well suited for the comparison of threading dislocations densities between similar GaN layers. It can be used to replace lattice misorientations measurements, or be associated with them to obtain an edge versus screw dislocations ratio.

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Correlation between the residual stress and the density of threading dislocations in GaN layers grown by hydride vapor phase epitaxy

Cited by 21 publications

References 30 publications

Effect of screw threading dislocations and inverse domain boundaries in GaN on the shape of reciprocal-space maps

Effect of screw threading dislocations and inverse domain boundaries in GaN on the shape of reciprocal-space maps

Influence of Ammonia Flow on Microstructural Properties of Polar GaN Layers Grown by HTVPE on Sapphire Substrates

X‐Ray Diffraction Microstrain Analysis for Extraction of Threading Dislocation Density of GaN Films Grown on Silicon, Sapphire, and SiC Substrates

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