We describe a high resolving power technique for Hall effect measurements, efficient in determining Hall mobility and carrier density in organic field-effect transistors and other low-mobility systems. We utilize a small low-frequency ac magnetic field (B rms < 0.25 T) and a phase sensitive (lock-in) detection of Hall voltage, with the necessary corrections for Faraday induction. This method significantly enhances signal-to-noise ratio and eliminates the necessity of using high magnetic fields in Hall effect studies. With the help of this method, we were able to obtain Hall mobility and carrier density in organic transistors with mobility as low as μ ~ 0.3 cm 2 V-1 s-1 by using a compact desktop apparatus and low magnetic fields. We have found a good agreement between Hall effect and electric field-effect measurements, indicating that contrary to the common belief, certain organic semiconductors with mobilities below 1 cm 2 V-1 s-1 can still exhibit a fully developed, bandsemiconductor like Hall effect, with the Hall mobility and carrier density matching those obtained in longitudinal transistor measurements. This suggests that even when μ < 1 cm 2 V-1 s-1 , charges in organic semiconductors can still behave as delocalized coherent carriers. This technique paves way to ubiquitous Hall effect studies in a wide range of lowmobility materials and devices, where it is typically very difficult to resolve Hall effect even in very high dc magnetic fields.