The ionic conductivity data of pure and doped lead bromide are used to evaluate the defect parameters: entropy (d&J and enthalpy (AH,) of motion of an anion vacancy, entropy (AS,) and enthalpy (AH,) of formation of a Schottky defect trio. The expression for the mobility of the bromide ion vacancies was recalculated from the conductivity of different thallium (I) bromide-doped crystals. The experimental expression is From conductivity isotherms (U/Q vs dopant concentration) the experimental relation for the intrinsic bromide ion-vacancy concentration was calculated to be wJO = (21 f 2) exp ( -o'57 iy '") mole fraction.A comparison between the ionic conductivity and a self-diffusion experiment shows that in the conductivity experiments the displacement of the bromide ion vacancies is measured.