Correlation of band formation and local vibrational mode structure in Ga _0.95 Al _0.05 As _{1– x} N _x with 0 ≤ x ≤ 0.03

Abstract

We present comprehensive optical studies of a series of as-grown and hydrogenated Ga 0.95 Al 0.05 As 1-x N x epitaxial layers with various amounts x of substitutional nitrogen. Photomodulated and contactless electromodulated spectroscopies were performed to gain information about the influence of N incorporation on the band structure. The results are interpreted in terms of the band-anticrossing model and compared to corresponding GaAs:N data. The local vibrational properties of the N atoms studied by Raman and Fourier-transform infrared absorption were found to depend strongly on the Ga/Al nearest-neighbour configurations of N. Correlations between local N environments and global band structure properties are confirmed by comparing results obtained before and after hydrogenation of the samples.

Band anticrossing in diluted AlxGa1−xAs1−yNy (x⩽0.37,y⩽0.04)

“…17 While C MN is smaller than the present value by about 10%, E N reported in Ref. ͑1͒ to the experimental E − , E − + ⌬ 0 , and E + data simultaneously, we obtain E N = 1.624͑Ϯ0.05͒ eV, C MN = 2.39͑Ϯ0.13͒ eV, E M = 1.492͑Ϯ0.002͒ eV, and ⌬ 0 = 0.344͑Ϯ0.002͒ eV for the present series of Al 0.06 Ga 0.94 As 1−y N y samples.…”