2002
DOI: 10.1063/1.1433167
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Correlation of charge transport to local atomic strain in Si-rich silicon nitride thin films

Abstract: Charge transport in Si-rich silicon nitride thin films is investigated. Over a composition range from Si3N4 to SiN0.54 the field dependent current density is observed to increase by as much as seven orders of magnitude, the residual Si–N bond strain decreases from 0.006 to −0.0026 and the Poole–Frenkel barrier height, ΦB, decreases from 1.08 to 0.55 eV. A direct correlation between ΦB and the local atomic strain is observed. It is concluded that reductions in ΦB are a manifestation of compositionally induced s… Show more

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Cited by 37 publications
(36 citation statements)
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“…[35,36] was clearly seen when compared with theoretical calculations shown in Figure 19A). The equation for this plot is labeled by Habermehl et al in Ref [35]. Next, the electrostatic pressure force vs. voltage was plotted for Si 3 N 4 in Figure 19B) showing that a 0.4 MPa electrostatic pressure great enough to exfoliate HOPG can be accomplish at >22V.…”
Section: Electrostatic Transfer Of Hopg To Si 3 N 4 /Simentioning
confidence: 59%
See 1 more Smart Citation
“…[35,36] was clearly seen when compared with theoretical calculations shown in Figure 19A). The equation for this plot is labeled by Habermehl et al in Ref [35]. Next, the electrostatic pressure force vs. voltage was plotted for Si 3 N 4 in Figure 19B) showing that a 0.4 MPa electrostatic pressure great enough to exfoliate HOPG can be accomplish at >22V.…”
Section: Electrostatic Transfer Of Hopg To Si 3 N 4 /Simentioning
confidence: 59%
“…30 V forward bias was applied to the HOPG, creating a 0.75 MPa electrostatic pressure force on 200 nm Si 3 N 4 , thus overcoming the 0.4 MPa needed for exfoliation from HOPG [22]. [35,36] was clearly seen when compared with theoretical calculations shown in Figure 19A). The equation for this plot is labeled by Habermehl et al in Ref [35].…”
Section: Electrostatic Transfer Of Hopg To Si 3 N 4 /Simentioning
confidence: 94%
“…and the decrease of PF barrier height. 17 For x ¼ 2:10, however, it may be speculated that the content of Si excess is so high that the amorphous Si clusters interconnect with each other in the Er:Si 3ð1þxÞ N 4 films and the carriers can transport through the interconnecting amorphous Si clusters, resulting in high conductivity and the departure from the PF model. For x • 0:27, due to the low density of trap states and high PF barrier, the PF emission needs higher electric field which exceeds the range of the electric field applied in our experiment.…”
mentioning
confidence: 96%
“…This suggests that the carrier transport and recombination mechanisms change with increasing bias in the same device. Various models have been proposed to explain carrier transport properties in (especially organic) LEDs, including Fowler-Nordheim tunneling, 35 Poole-Frenkel emission, 36 trap-limited transport, 37 and space charge-limited current 38 models. However, these models cannot account for the J-V characteristics of the current CQDs-based LEDs.…”
Section: -5mentioning
confidence: 99%