Graphene and other layered materials, such as transition metal dichalcogenides, have rapidly established themselves as exceptional building blocks for optoelectronic applications because of their unique properties and atomically thin nature. The ability to stack them into van der Waals (vdWs) heterostructures with new functionality has opened a new platform for fundamental research and device applications. Nevertheless, near-infrared (NIR) photodetectors based on layered semiconductors are rarely realized. In this work, we fabricate a graphene-MoTe-graphene vertical vdWs heterostructure on a SiO/p-Si substrate by a facile and reliable site-controllable transfer method and apply it for photodetection from the visible to NIR wavelength range. Compared to the layered semiconductor photodetectors reported thus far, the graphene-MoTe-graphene photodetector has a superior performance, including high photoresponsivity (∼110 mA W at 1064 nm and 205 mA W at 473 nm), high external quantum efficiency (EQE; ∼12.9% at 1064 nm and ∼53.8% at 473 nm), rapid response and recovery processes (a rise time of 24 μs and a fall time of 46 μs under 1064 nm illumination), and free from an external source-drain power supply. We have employed scanning photocurrent microscopy to investigate the photocurrent generation in this heterostructure under various back-gate voltages and found that the two Schottky barriers between the graphenes and MoTe play an important role in the photocurrent generation. In addition, the vdWs heterostructure has a uniform photoresponsive area. The photoresponsivity and EQE of the photodetector can be modulated by the back-gate (p-Si) voltage. We compared the responsivities of thin and thick flakes and found that the responsivity had a strong dependence on the thickness. The heterostructure has promising applications in future novel optoelectronic devices, enabling next-generation high-responsivity, high-speed, flexible, and transparent NIR devices.

Engineering the substrate of 2D transition metal dichalcogenides can couple the quasiparticle interaction between the 2D material and substrate, providing an additional route to realize conceptual quantum phenomena and novel device functionalities, such as realization of a 12-time increased valley spitting in single-layer WSe through the interfacial magnetic exchange field from a ferromagnetic EuS substrate, and band-to-band tunnel field-effect transistors with a subthreshold swing below 60 mV dec at room temperature based on bilayer n-MoS and heavily doped p-germanium, etc. Here, it is demonstrated that epitaxially grown single-layer MoS on a lattice-matched GaN substrate, possessing a type-I band alignment, exhibits strong substrate-induced interactions. The phonons in GaN quickly dissipate the energy of photogenerated carriers through electron-phonon interaction, resulting in a short exciton lifetime in the MoS /GaN heterostructure. This interaction enables an enhanced valley helicity at room temperature (0.33 ± 0.05) observed in both steady-state and time-resolved circularly polarized photoluminescence measurements. The findings highlight the importance of substrate engineering for modulating the intrinsic valley carriers in ultrathin 2D materials and potentially open new paths for valleytronics and valley-optoelectronic device applications.

In this report, we find multilayered graphene, which has good transparency, conductivity and suitable work function, can be used as the anode for the organic light emitting device. Our device structure is Al/glass/multilayered graphene/V2O5/NPB/CBP:(ppy)2Ir(acac)/Bphen/Bphen:Cs2CO3/Sm/Au. The maximum luminance efficiency and maximum power efficiency reach 0.75 cd/A and 0.38 lm/W, respectively. We believe that by optimizing the hole density and uniforming the thickness of the multilayered graphene anode, the device efficiency can be remarkably increased in the future.

SiQDs with an average diameter of 2.6 ± 0.5 nm are used as the light emitting material in high-efficiency inverted structure light emitting diodes.