No abstract

No abstract

In this report, we find multilayered graphene, which has good transparency, conductivity and suitable work function, can be used as the anode for the organic light emitting device. Our device structure is Al/glass/multilayered graphene/V2O5/NPB/CBP:(ppy)2Ir(acac)/Bphen/Bphen:Cs2CO3/Sm/Au. The maximum luminance efficiency and maximum power efficiency reach 0.75 cd/A and 0.38 lm/W, respectively. We believe that by optimizing the hole density and uniforming the thickness of the multilayered graphene anode, the device efficiency can be remarkably increased in the future.

No abstract

Cd-enriched ambient, high quality n-type CdSe nanobelts (NBs) with various electron concentrations (from ∼1016 to 1018 cm−3), which can meet different device requirements, were synthesized via the chemical vapor deposition (CVD) method. The electron mobilities are much higher than those reported previously for CdSe one-dimensional (1D) nanostructures. High performance single CdSe NB field effect transistors (NB-FETs) and CdSe NB/p +-Si heterojunction light emitting diodes (HLEDs) are fabricated and studied. The NB-FETs have the best performance among the reported CdSe 1D nano-FETs with an on−off ratio of ∼3 × 108, a threshold voltage of ∼−4.1 V, and a maximum transconductance of ∼1.49 μS. The room temperature electroluminescence spectra of the HLEDs consist of only an intense CdSe band-edge emission peak (∼708 nm) with a full width at half-maximum of about 29 nm.