Correlation of contact resistance with microstructure for Au/Ni/Al/Ti/AlGaN/GaN ohmic contacts using transmission electron microscopy

Bright, A. N.; Thomas, Paul J.; Weyland, Matthew; Tricker, Dave M; Humphreys, C. J.; Davies, Richard J.

doi:10.1063/1.1347003

Cited by 157 publications

(84 citation statements)

References 18 publications

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“…GaxIn1-xSb compounds offer the combined optimum performance for both n and p-type devices, and could facilitate the realisation of common channel inverters [2]. Described in this section are some findings from the first demonstration of the use of a clustered plasma tool to explore the effect of in situ H2 plasma exposure, prior to high-k atomic layer deposition (ALD), on the p-Ga0.7In0.3Sb-Al2O3 interface.…”

Section: Plasma Processes For Gainsb Surfacesmentioning

confidence: 99%

“…As described above, compound semiconductors may be an important enabling high mobility material to enable continued scaling of logic devices to supply voltages below 0.5 V. Antimonide based compound semiconductors (ABCS) are a particularly intriguing family of materials as they have excellent transport properties for both electrons and holes [2] and could therefore provide a solution for all III-V CMOS. GaxIn1-xSb compounds offer the combined optimum performance for both n and p-type devices, and could facilitate the realisation of common channel inverters [2].…”

Section: Plasma Processes For Gainsb Surfacesmentioning

confidence: 99%

“…For the last decade, AlGaN/GaN based HFETs have been intensely investigated as potential next generation power electronic device [2]. Emerging device topologies, e.g.…”

Section: Chlorine-based Atomic Layer Etchingmentioning

confidence: 99%

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Plasma processing of III-V materials for energy efficient electronics applications

Thayne

Millar

et al. 2017

SPIE Proceedings

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This paper reviews some recent activity at the James Watt Nanofabrication Centre in the University of Glasgow in the area of plasma processing for energy efficient compound semiconductor-based transistors. Atomic layer etching suitable for controllable recess etching in GaN power transistors will be discussed. In addition, plasma based surface passivation techniques will be reviewed for a variety of compound semiconductor materials ( (100) and (110) oriented InGaAs and InGaSb).

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Section: Plasma Processes For Gainsb Surfacesmentioning

confidence: 99%

Section: Plasma Processes For Gainsb Surfacesmentioning

confidence: 99%

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Plasma processing of III-V materials for energy efficient electronics applications

Thayne

Millar

et al. 2017

SPIE Proceedings

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“…The use of such multilayer contacts is known to result in a lower contact resistance than for bilayers of Al/Ti, but the full effect of these additional layers remains unclear. Bright et al [8] commented that the optimum Ti : Al ratio is affected by other elements present. It was also noted that the presence of Au at the contact/AlGaN interface may not be detrimental [8,9].…”

mentioning

confidence: 99%

“…Bright et al [8] commented that the optimum Ti : Al ratio is affected by other elements present. It was also noted that the presence of Au at the contact/AlGaN interface may not be detrimental [8,9].…”

mentioning

confidence: 99%

TEM Assessment of AuTiAlTi and AuPdAlTi Ohmic Contacts to AlGaN/GaN

Fay

Harrison

Balmer

et al. 2002

phys. stat. sol. (c)

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AuTiAlTi and AuPdAlTi contacts to AlGaN/GaN, rapid thermal annealed at temperatures ranging from 650 to 950 C have been investigated using conventional and chemical TEM analysis. Ohmic behaviour was seen for AuTiAlTi contacts annealed at 750 C or higher and in AuPdAlTi contacts annealed at 850 C or higher. The formation of interfacial TiN after anneals at high temperatures is required to activate the contact. At anneals of 950 C, the samples show a structure of TiN grains within an interfacial band, with TiN inclusions into the AlGaN preceded by an Al-Au diffusion front. The presence of these inclusions does not appear to have any effect on the resistivity of the contact. Neither Ti nor Pd diffusion barriers have prevented the interdiffusion of Au through the Al and Ti contact layers. The implication is that the presence of Au mediates the formation of TiN at the annealing temperatures used in these samples.

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Microstructure and Composition of Focused‐Ion‐Beam‐Deposited Pt Contacts to GaN Nanowires

2005

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GaN is a technologically important semiconductor with a wide direct bandgap (3.39 eV), and boasts strong light emission in the blue and UV regions of the electromagnetic spectrum. It finds extensive commercial applications in lasers and light-emitting diodes.[1] Because of its high melting temperature, high breakdown field, and high saturation drift velocity, it is a prime candidate for high-temperature, high-voltage, and high-power optoelectronic-device applications. In recent years, research interest in GaN nanowires has increased significantly because, for sufficiently thin nanowires, quantumconfinement effects may be observed, [2] which may lead to novel behavior and applications. GaN nanowires appear to be especially attractive as low-dimensional high-power blue and UV laser light sources, because it is anticipated that high optical gains and low lasing thresholds will be achievable when the nanowire diameter is smaller than the exciton radius. [3] It has been demonstrated that GaN nanowires possess great potential for photonic-, optoelectronic-, and electronic-device applications. [4][5][6][7] For practical device applications, nanowires have to be controllably assembled, precisely located, and individually contacted in order to build device architectures. This continues to be a formidable technical challenge. Traditional lithographic approaches are hindered by the need to register contacts to individual nanowires, although new methodologies to circumvent this limitation have been proposed. [8] Recently, direct writing techniques using focused ion beams (FIBs) have been used to form interconnects to individual nanowires. [9][10][11][12][13] To do this, an organoplatinum precursor gas flow was directed at the surface of the sample while the target region was irradiated with an energetic particle beam, which decomposed the gas and deposited Pt over the irradiated region. Decomposition of the precursor and Pt deposition can be achieved using focused beams of ions (IBID-Pt, where IBID = ion-beaminduced deposition) [9,10,12,13] or electrons (EBID-Pt, where EBID = electron-beam-induced deposition).[11] The unusually low resistance or ohmic contacts on n-type GaN nanowires [9] suggest that IBID-Pt contacts are different from conventional thin-film Pt contacts, which generally exhibit a large Schottky barrier on n-GaN. Here we present a complete investigation of the structural and chemical character of FIB-deposited metal contacts on GaN nanowires, in order to understand how composition and microstructure affect the electrical performance. Contact structures have been traditionally studied using cross-sectional transmission electron microscopy (TEM). TEM enables imaging, diffraction, and spectroscopy at nearatomic spatial resolution on the same region of interest, providing a wealth of morphological, structural, and compositional information, so that even the most complex contact structures can be readily understood. [14,15] Although many preparation techniques are capable of creating cross-sections suitable for TE...

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Correlation of contact resistance with microstructure for Au/Ni/Al/Ti/AlGaN/GaN ohmic contacts using transmission electron microscopy

Cited by 157 publications

References 18 publications

Plasma processing of III-V materials for energy efficient electronics applications

Plasma processing of III-V materials for energy efficient electronics applications

TEM Assessment of AuTiAlTi and AuPdAlTi Ohmic Contacts to AlGaN/GaN

Microstructure and Composition of Focused‐Ion‐Beam‐Deposited Pt Contacts to GaN Nanowires

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