Correlation of Electron Radiation Induced-Damage in GaAs Solar Cells

Warner, Jeffrey H.; Messenger, S.R.; Walters, Robert J.; Summers, G.P.; Lorentzen, Justin; Wilt, David M.; Smith, Mark A.

doi:10.1109/tns.2006.877877

Cited by 46 publications

(31 citation statements)

References 18 publications

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“…For any value of n other than unity, the D d represents an effective D d for the given particle and reference energy (E ref ). The available data (19)(20)(21) suggest that when the active region is primarily composed of p-type material the electron displacements often follow a quadratic dependence on NIEL (n = 2), whereas that for n-type material follows a linear dependence (n = 1) and for the most part, the displacements follow a power law dependence on NIEL with an exponent varying between the value of one and two (1 < n ≤ 2) (22). If the normalized P max degradations are plotted as a function of effective 1 MeV electron D d , the data will collapse to a single characteristic curve as shown in Figure 7.…”

Section: Displacement Damage Dose Methodsmentioning

confidence: 99%

Displacement damage analysis and modified electrical equivalent circuit for electron and photon-irradiated silicon solar cells

Arjhangmehr

Feghhi

2014

Radiation Effects and Defects in Solids

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Solar modules and arrays are the conventional energy resources of space satellites. Outside the earth's atmosphere, solar panels experience abnormal radiation environments and because of incident particles, photovoltaic (PV) parameters degrade. This article tries to analyze the electrical performance of electron and photon-irradiated mono-crystalline silicon (mono-Si) solar cells. PV cells are irradiated by monoenergetic electrons and poly-energetic photons and immediately characterized after the irradiation. The mean degradation of the maximum power (P max ) of silicon solar cells is presented and correlated using the displacement damage dose (D d ) methodology. This method simplifies evaluation of cell performance in space radiation environments and produces a single characteristic curve for P max degradation. Furthermore, complete analysis of the results revealed that the open-circuit voltage (V oc ) and the filling factor of mono-Si cells did not significantly change during the irradiation and were independent of the radiation type and fluence. Moreover, a new technique is developed that adapts the irradiation-induced effects in a single-cell equivalent electrical circuit and adjusts its elements. The "modified circuit" is capable of modeling the "radiation damage" in the electrical behavior of mono-Si solar cells and simplifies the designing of the compensation circuits.

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Section: Displacement Damage Dose Methodsmentioning

confidence: 99%

Displacement damage analysis and modified electrical equivalent circuit for electron and photon-irradiated silicon solar cells

Arjhangmehr

Feghhi

2014

Radiation Effects and Defects in Solids

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“…In region 1, there is a minimal change in dark current (mechanism unknown) until the DDD reaches ~7x10 7 MeV/g. Thereafter, there is an increase in slope as defined by region 2 until ~6x10 8 MeV/g. Region 3 is then defined showing the linear behavior with the dark current and DDD.…”

Section: Simulation Of On-orbit Performancementioning

confidence: 99%

“…The concepts of nonionizing energy loss (NIEL) and displacement damage dose (DDD) have been shown to be useful for correlating displacement damage produced by different particles in irradiated semiconductor [1][2][3][4][5][6][7][8][9]. This research has culminated over the past few years in the context of solar cell degradation in the production of a MATLAB-based software package called Solar Cell Radiation Environment Analysis Models (SCREAM) [10,11].…”

Section: Introductionmentioning

confidence: 99%

Gaas Displacement Damage Dosimeter Based on Diode Dark Currents

et al. 2017

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GaAs diode dark currents are correlated over a very large proton energy range as a function of displacement damage dose (DDD). The linearity of the dark current increase with DDD over a wide range of applied voltage bias deems this device an excellent candidate for a displacement damage dosimeter. Additional proton testing performed in situ enabled error estimate determination to within 10% for simulated space use.

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“…It is for electrons that the discrepancies with the NIEL are observed most frequently. These deviations are measured whatever the semiconductor: Si [7] [16] [17] [20] and GaAs [10]- [15] [18] [19] [21].…”

Section: Introductionmentioning

confidence: 99%

“…[16][18][19][23]. In our case, the damage factor is calculated by dividing the dark current increase by the fluence Φ. current at the fluence Φ and 0 the initial dark current.…”

mentioning

confidence: 99%

Displacement Damage Effects in InGaAs Photodiodes due to Electron, Proton, and Neutron Irradiations

Nuns

Inguimbert

Barbero³

et al. 2020

IEEE Trans. Nucl. Sci.

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HAL is a multidisciplinary open access archive for the deposit and dissemination of scientific research documents, whether they are published or not. The documents may come from teaching and research institutions in France or abroad, or from public or private research centers. L'archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des établissements d'enseignement et de recherche français ou étrangers, des laboratoires publics ou privés.

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Correlation of Electron Radiation Induced-Damage in GaAs Solar Cells

Cited by 46 publications

References 18 publications

Displacement damage analysis and modified electrical equivalent circuit for electron and photon-irradiated silicon solar cells

Displacement damage analysis and modified electrical equivalent circuit for electron and photon-irradiated silicon solar cells

Gaas Displacement Damage Dosimeter Based on Diode Dark Currents

Displacement Damage Effects in InGaAs Photodiodes due to Electron, Proton, and Neutron Irradiations

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