Dedicated to Professor Dr. Roland Zimmermann on the occasion of his 60th birthdayThe possibility of Bose-Einstein condensation of excitons in semiconductors and/or their superfluid transport are long-standing, still controversially discussed problems. In a recent series of experiments by E. Fortin and coworkers [1-3] [phys. stat. sol. (b) 191, 345 (1995); Phys. Rev. Lett. 77, 896 (1996); and Proc. Internat. Conf. Exciton Processes in Condensed Matter, World Scientific, Singapore 2000, respectively], (para-)excitons in Cu 2 O have been detected electrically by their field ionization in a Schottky barrier. We analyze the electric field in the Schottky barrier and its screening by the holes remaining after field ionization and find serious screening and saturation effects of this Schottky-barrier exciton detector under the excitation conditions of the experiment. These findings make a reinterpretation of the data very likely.
IntroductionExcitons are the quanta of the collective excitation of the electron system in semiconductors and insulators. This excitation can be described to a very good approximation as a two-particle state, consisting of an electron in the conduction band and of the hole left behind in the valence band plus Coulomb and exchange interaction between these two particles. In so far the problem is closely related to the hydrogen or the positronium atom (see, e.g., [4,5], and references therein). Obviously the exciton is an electrically neutral quasiparticle with integer spin, but it is composed of two fermions, namely electron and hole. As a consequence of this fact, the commutation relations between exciton creation and annihilation operators are those of bosons at low densities, but with a deviation from ideal boson character via a term which increases with the density of excitons [4].The interplay of bosonic character and fermionic constituents triggered a lot of research over several decades about what happens with excitons at the highest densities. In the following we summarize shortly the present situation for bulk semiconductors. It became clear that at the highest densities a transition to a metallic electron-hole plasma (EHP) occurs [4][5][6]. Depending on the material parameters and excitation conditions such as carrier lifetime, excitation density, and carrier temperature, the plasma may even undergo a first-order phase transition to a liquid-like state, the analogon to molten metallic hydrogen. This is even true in CuCl [7] in spite of its large exciton binding energy and small Bohr radius, shifting the density for the occurrence of an EHP (also called Mott density) from values below 10 17 cm À3 , e.g., for Ge to very high values around 10 20 cm À3 . Experimental investigations and the theoretical modelling of the electron-hole plasma have been pushed by many research groups world-wide as can be seen, e.g., from the references in reviews and textbooks like [4,5]. These refer-