We revisit the detection of excitons in Cu 2 O by the exciton-mediated effect. It is shown that this type of detector is linear over a wide range of exciton densities, contrary to a recent claim that it should quickly saturate.A recent manuscript [1] addresses the issue of exciton detection by the voltaic effect in Cu 2 O. Based on theoretical considerations, the authors of reference [1] conclude that this type of detector, which was used by our group to report anomalous transport of high density excitons in Cu 2 O [2-4] is not adequate since it must necessarily be in a strong saturated regime. Drawing from this conclusion, the authors revisit our data and their interpretation, and then propose their own interpretation. We disagree with the conclusions of reference [1] and show in this paper that our detection method is indeed valid.For the sake of clarity, we start by briefly describing again the principle of the exciton detector itself, since the authors of [1] have apparently overlooked reference [5] where we had previously discussed its use at low particle densities. Paper [5] was triggered by the observation of a photovoltaic signal in Cu 2 O at low temperature. Through a semitransparent Au deposited electrode forming an ohmic contact, a weak, CW monochromatic light illuminated the front face of a single crystal sample of high quality cooled to low temperatures. From the back side, where a Cu electrode was deposited, a voltaic signal was detected in the absence of applied field. This result is surprising at first sight. A Cu/Cu 2 O interface is known to act as a Schottky barrier at room temperature, which under illumination gives rise to an external current in the absence of applied voltage. In a conventional Schottky detector, the presence of free carriers, holes in this case, is detected. However, the astonishing aspect was the fact that the results were obtained at low temperatures, even if excitons were produced in the first place. Thermal dissociation of excitons into free electron-hole pairs is highly unlikely in the bulk of Cu 2 O, in view of the large binding energy (150 meV) and small thermal energy, kT ~ 1 meV. We attributed the observed voltaic signal to the dissociation of excitons in the immediate vicinity of the metal/semiconductor contact by a built-in electric field, with subsequent collection of electrons and holes at the electrodes. Hence the name exciton-mediated voltaic effect. The voltaic signal was measured as a function of sample thickness, sample temperature, light frequency and intensity. All results, including complex reversal of spectral structures in the excitation spectrum, could be explained quantitatively by taking into account the migration of the