Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

Wu, Tian-Li; Marcon, Denis; Bakeroot, Benoit; Jaeger, B. De; Lin, Hengwei; Franco, J.; Stoffels, Steve; Hove, M. Van; Roelofs, Robin; Groeseneken, G.; Decoutere, Stefaan

doi:10.1063/1.4930076

Cited by 59 publications

(33 citation statements)

References 13 publications

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“…Light irradiation could significantly recover the V th variation. The result is in agreement with literature [11][12][13]. Based on these reports, the V th degradation is correlated with interface traps.…”

Section: Resultssupporting

confidence: 93%

Investigation of gate pulse induced interface trap behaviours and its relationship with threshold voltage instability in Algan/Gan-On-Si MIS-Hemts

Dong¹,

Lin²,

Wang³

et al. 2016

Proceedings of the 2016 International Conference on Advanced Electronic Science and Technology (AEST 2016)

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Abstract. By measuring transfer characterises before and after a given number of specific pulse cycles applied on the gate electrode for AlGaN/GaN MIS-HEMTs, the threshold voltage (Vth) instability is investigated. Furthermore, by measuring the change in transient gate capacitance (ΔC) under different pulses, the effect of applied gate pulse on interface traps in AlGaN/GaN MIS-HEMTs is studied. These gate pulse induced states are believed to be responsible for the Vth instability in AlGaN/GaN MIS-HEMTs.

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Section: Resultssupporting

confidence: 93%

Investigation of gate pulse induced interface trap behaviours and its relationship with threshold voltage instability in Algan/Gan-On-Si MIS-Hemts

Dong¹,

Lin²,

Wang³

et al. 2016

Proceedings of the 2016 International Conference on Advanced Electronic Science and Technology (AEST 2016)

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“…7,8 However, the reliability of AlGaN/GaN HEMTs is still of a great concern. 9 Some researchers have associated the major degradation mechanisms in AlGaN/GaN HEMTs such as the current collapse, 10 threshold voltage shift, 11 and the increase of the gate/drain leakage current 12 with the deep level traps in the device. 13 On the other hand, a clear understanding between trap behaviours and device reliability is still highly desirable.…”

Section: Introductionmentioning

confidence: 99%

Trap behaviours characterization of AlGaN/GaN high electron mobility transistors by room-temperature transient capacitance measurement

et al. 2016

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In this paper, the trap behaviours in AlGaN/GaN high electron mobility transistors (HEMTs) are investigated using transient capacitance measurement. By measuring the transient gate capacitance variance (ΔC) with different pulse height, the gate pulse induced trap behaviours in SiNX gate dielectric layer or at the SiNX/AlGaN interface is revealed. Based on the results, a model on electron traps in AlGaN/GaN HEMTs is proposed. The threshold voltage (Vth) instability in AlGaN/GaN HEMTs is believed to be correlated with the presence of these traps in SiNX gate dielectric layer or at the SiNX/AlGaN interface. Furthermore, trap density before and after step-stress applied on drain electrode is quantitatively analyzed based on ΔC measurement.

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“…Frequency-dependent conductance method was originally developed for analyzing Dit in conventional MOSFETs [28], and it has also been widely adapted for GaN-based MIS HEMT interface analysis [6,23,[29][30][31][32][33][34]. This method measures the equivalent parallel conductance (Gp) that represents the power loss due to interface trap states capturing and emitting carriers as a function of VG DC biasing and AC signal frequency (ω).…”

Section: Interface Trap State Characterizationmentioning

confidence: 99%

Investigation of annealed, thin(∼2.6 nm)-Al₂O₃/AlGaN/GaN metal-insulator-semiconductor heterostructures on Si(111) via capacitance-voltage and current-voltage studies

Lee

Bayram

2019

Mater. Res. Express

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Investigation of annealed, thin(~ 2.6 nm)-Al₂O₃/AlGaN/GaN metal-insulatorsemiconductor heterostructures on Si(111) via capacitance-voltage and current-voltage studies Annealed, thin(~ 2.6 nm)-Al2O3/AlGaN/GaN metal-insulator-semiconductor (MIS) heterostructures on Si(111) are fabricated and studied via capacitance-voltage (C-V) measurements to quantify densities of fast and slow interface trap states and via current-voltage (I-V) measurements to investigate dominant gate current leakage mechanisms. Dual-sweep C-V measurements reveal small voltage hysteresis (~ 1 mV) around threshold voltage, indicating a low slow interface trap state density of ~ 10 9 cm -2 . Frequency-dependent conductance measurements show fast interface trap state density ranging from 8 × 10 12 to 5 × 10 11 eV -1 cm -2 at energies from 0.275 to 0.408 eV below the GaN conduction band edge. Temperature-dependent I-V characterizations reveal that trap-assistant tunneling (TAT) dominates the reverse-bias carrier transport while the electric field across the Al2O3 ranges from 3.69 to 4.34 MV/cm, and the dominant Al2O3 trap state energy responsible for such carrier transport is identified as 2.13 ± 0.02 eV below the Al2O3 conduction band edge. X-ray photoelectron spectroscopy measurements on Al2O3 before and after annealing suggest an annealing-enabled reaction between Al-O bonds and inherent H atoms. Overall, we report that annealed, thin-Al2O3 dielectric is an effective (Al)GaN surface passivation alternative when minimizing passivation-

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Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

Abstract: Articles you may be interested in

Cited by 59 publications

References 13 publications

Investigation of gate pulse induced interface trap behaviours and its relationship with threshold voltage instability in Algan/Gan-On-Si MIS-Hemts

Investigation of gate pulse induced interface trap behaviours and its relationship with threshold voltage instability in Algan/Gan-On-Si MIS-Hemts

Trap behaviours characterization of AlGaN/GaN high electron mobility transistors by room-temperature transient capacitance measurement

Investigation of annealed, thin(∼2.6 nm)-Al₂O₃/AlGaN/GaN metal-insulator-semiconductor heterostructures on Si(111) via capacitance-voltage and current-voltage studies

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Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

Abstract: Articles you may be interested in

Cited by 59 publications

References 13 publications

Investigation of gate pulse induced interface trap behaviours and its relationship with threshold voltage instability in Algan/Gan-On-Si MIS-Hemts

Investigation of gate pulse induced interface trap behaviours and its relationship with threshold voltage instability in Algan/Gan-On-Si MIS-Hemts

Trap behaviours characterization of AlGaN/GaN high electron mobility transistors by room-temperature transient capacitance measurement

Investigation of annealed, thin(∼2.6 nm)-Al2O3/AlGaN/GaN metal-insulator-semiconductor heterostructures on Si(111) via capacitance-voltage and current-voltage studies

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Investigation of annealed, thin(∼2.6 nm)-Al₂O₃/AlGaN/GaN metal-insulator-semiconductor heterostructures on Si(111) via capacitance-voltage and current-voltage studies