Correlation of transport and optical properties of Si-doped Al0.23G0.77N

Abstract

Articles you may be interested inEffect of doping on the mid-infrared intersubband absorption in GaN/AlGaN superlattices grown on Si(111) templates Appl.Transport and photoluminescence of silicon-doped GaInP grown by a valved phosphorus cracker cell in solid source molecular beam epitaxyThe properties of Si-doped Al 0.23 Ga 0.77 N grown by metalorganic vapor-phase epitaxy have been investigated by photoluminescence and Hall effect measurements. Nonintentionally doped samples were found to be insulating, while the room temperature carrier concentration of the doped layers did not vary linearly with the silane flow. The Si donor activation energy decreases with the doping level and the results correlate very well with those of Si-doped GaN. The temperature dependence of the photoluminescence spectra of the samples, in particular, their quenching with increasing temperature, can be explained by considering characteristic energies deduced from the Hall effect measurements. Our study shows that Al 0.23 Ga 0.77 N is a well-behaved semiconductor alloy, in which Si is a standard hydrogeniclike donor.

Investigating the electrical properties of Si donors in AlxGa1–xN alloys

“…For 0 ≤ x ≤ 0.41 the E D energies correlate well with literature (see Ref. [9] and references therein), while for higher compositions E D lies within the broad range of reported values [13][14][15]. Figure 3 shows the E D values as a function of Al content for all the Al x Ga 1-x N samples.…”

“…The resistivity of the Al 0.51 Ga 0.49 N and Al 0.65 Ga 0.35 N samples were 3.4 Ω cm and 270 Ω cm, respectively. The second series, grown with a higher silane flow, gave samples with far superior electrical properties, a phenomenon previously reported for Al x Ga 1-x N [8,9]. The higher doped Al 0.51 Ga 0.49 N sample was far less resistive (ρ = 0.21 Ω cm), had a carrier concentration of 2.5 × 10 18 cm…”

Determination of Al molar fraction in AlxGa1-xN films by Raman scattering

“…Finally, observation of characteristic x ray by electron-beam excitation, so-called the electron probe microanalysis (EPMA), has rapidly spread as a reliable and convenient tool for quantitative microscopic characterization. [11][12][13][14] Raman scattering is also a powerful optical characterization tool for lattice and electronic properties of nitride semiconductors. 15,16 It is very convenient because it is nondestructive and needs no special sample pretreatment.…”

Investigating the nature of Si doping in Al0.23Ga0.77N

“…It was not possible to measure the carrier concentration of the undoped material, due to its highly resistive nature ðr > 10 5 O cmÞ: The 300 K mobility of the samples was found to vary between approximately 20 and 70 cm 2 /V s, depending on the doping level, while the carrier concentration did not increase linearly with the silane flow [12]. Fig.…”