Correlations between one-dimensional structures at the Si(557):Au surface

Sauter, Martin; Hoffmann, R.; Sürgers, Christoph; Löhneysen, H. v.

doi:10.1103/physrevb.75.195436

Cited by 7 publications

(8 citation statements)

References 16 publications

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“…Figure 3 shows voltage-dependent STM images taken at RT and LT. Besides the localized protrusions of the adatom chain, the periodic modulation of the intensity along the step edge ("row") is clearly resolved for positive voltages at high and low temperatures, as observed earlier [16,17]. In more than 80 % of our STM images, the phase of this periodic modulation on the row changes by half a period when reversing the tunneling bias.…”

Section: Resultssupporting

confidence: 77%

“…This was interpreted as a metal-insulator transition in the upper band S 1 -associated with the step edgedue to a Peierls-like instability with a characteristic transition temperature T c ≈ 270 K. The presence of a Peierls transition was supported by the observation of a dimerization in STM images at low temperature (LT) T = 77 K which seemed to be absent at RT [13,16]. However, previously reported well-resolved STM images detected such a dimerization also at RT, even without thermal fluctuation of the buckling [17,18], putting the existence of a Peierls transition on this surface into question. Furthermore, an ARPES study using synchrotron radiation revealed that both bands S 1 and S 2 remain metallic for 83 K ≤ T ≤ 300 K, thus excluding the presence of a Peierls-type metal-insulator transition, at least above 83 K [19].…”

Section: Introductionmentioning

confidence: 85%

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Temperature-dependent scanning tunneling spectroscopy on the Si(557)-Au surface

et al. 2014

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Room-temperature and low-temperature (77 K) scanning tunneling spectroscopy (STS) and voltage-dependent scanning tunneling microscopy (STM) data are used to study the local electronic properties of the quasi-one-dimensional Si(557)-Au surface in real space. A gapped local electron density of states near theΓ point is observed at different positions of the surface, i.e., at protrusions arising from Si adatoms and step-edge atoms. Within the gap region, two distinct peaks are observed on the chain of localized protrusions attributed to Si adatoms. The energy gap widens on both types of protrusions after cooling from room temperature to T = 77 K. The temperature dependence of the local electronic properties can therefore not be attributed to a Peierls transition occurring for the step edge only. We suggest that more attention should be paid to finite-size effects on the one-dimensional segments.

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Section: Resultssupporting

confidence: 77%

Section: Introductionmentioning

confidence: 85%

Temperature-dependent scanning tunneling spectroscopy on the Si(557)-Au surface

et al. 2014

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“…This coupling suppresses the thermodynamic fluctuations that otherwise would destroy longrange order in one dimension. However, LEED ͑Lipton-Duffin et al, STM ͑Losio et al, 2001;Sauter et al, 2007͒ data of Si͑557͒-Au showed that the ϫ2 ordering of the Si adatom wires at RT and the ϫ2 ordering of the step-edge wires at low temperature are not laterally correlated. The same is true for the ϫ3 and ϫ2 periodicities in neighboring wires on Si͑553͒-Au; their phases appear to be random according to both STM and LEED ͑Ahn et al, 2005;Snijders et al, 2006͒ ͑see Fig.…”

Section: Defects and Interchain Correlationsmentioning

confidence: 99%

Colloquium: Electronic instabilities in self-assembled atom wires

2010

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Many quasi-one-dimensional ͑1D͒ materials are experimental approximations to the textbook models of Peierls instabilities and collective excitations in 1D electronic systems. The recently observed self-assembly of atom wires on solid surfaces has provided fascinating new insights into the nature of their structural and electronic instabilities, from both real-space and momentum-space perspectives. In this Colloquium, three of the most studied atom wire arrays are highlighted, all featuring multiple surface-state bands. One of these is made of indium atoms on a flat silicon ͑111͒ surface, while the two others consist of gold atoms on surfaces that are vicinal to Si͑111͒. The experimental and theoretical results are discussed with a focus on the detailed mechanisms of the observed phase transitions and on the role of microscopic defects.

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“…1 The Au/ Si͑557͒-1 ϫ 2 surface may be one of the quasi-1D systems self-assembled on semiconducting surfaces, showing two neighboring proximal bands near Fermi level. [2][3][4][5][6][7][8][9][10][11][12][13] The origin of these two proximal bands has been a subject of continued studies. At first, they have been attributed to the spin-charge separation of Luttinger liquid, 2 which has been ruled out by a subsequent angle-resolved photoemission spectroscopy ͑ARPES͒ study with an improved resolution.…”

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confidence: 99%

Direct evidence of the step-edge buckling at theAu/Si(557)−1×2surface

et al. 2009

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We have investigated atomic structure and electrical properties of the Au/ Si͑557͒-1 ϫ 2 surface by using scanning tunneling microscopy. We observe the doubled periodicity ͑ϫ2͒ for the step-edge atoms even far away from defects at room temperature ͑RT͒, indicating no Peierls-type transition reported earlier. We further identify the Au atoms well resolved from Si atoms in the Au-Si-Au chain at RT, in good accord with the prevailing structural model. Our scanning tunneling spectroscopy data taken along the step-edge atoms unambiguously reveal that these step-edge Si atoms are metallic, and are buckled apparently with a charge transferred from down to up Si atoms. We find no significant thermal fluctuation of the buckled step edges at RT.

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Correlations between one-dimensional structures at the Si(557):Au surface

Cited by 7 publications

References 16 publications

Temperature-dependent scanning tunneling spectroscopy on the Si(557)-Au surface

Temperature-dependent scanning tunneling spectroscopy on the Si(557)-Au surface

Colloquium: Electronic instabilities in self-assembled atom wires

Direct evidence of the step-edge buckling at theAu/Si(557)−1×2surface

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