Corrigendum: “Influence of surface nitridation and an AlN buffer layer on the growth of GaN nanostructures on a flexible Ti metal foil using laser molecular beam epitaxy” [Jpn. J. Appl. Phys. 58, SC1032 (2019)]

Effect of surface modification and laser repetition rate on growth, structural, electronic and optical properties of GaN nanorods on flexible Ti metal foil

“…These ndings disclose the effect of laser repetition rate on the surface morphology of GaN nanostructures on nitridated Ti metal foils and a moderate repetition rate of 20 Hz is found to promote the growth of oriented GaN nanorods with a high areal density. Comparing with our previous studies, it is noted that the density of GaN nanorods on pre-nitridated Ti foils increased about one order with the increase of pre-nitridation temperature from 700 to 850 C. 21,24 The crystalline structure of the LMBE grown GaN nanostructures on nitridated Ti foil at different laser repetition rates and Ti foil substrate were characterized using 2q XRD scan and it is presented in Fig. 2(a).…”

Effects of experimental parameters on the growth of GaN nanowires on Ti-film/Si(1 0 0) and Ti-foil by molecular beam epitaxy

“…The use of metallic substrates can be beneficial for some optoelectronic applications due to specific properties of metals such as efficient thermal conductivity, and charge carrier extraction. A few recent studies reported the growth of GaN nanowires on Ti-films [11,12] and foils [13][14][15][16][17][18]. In most of these studies, a TiN layer was prepared before growing GaN nanowires [11][12][13][14][16][17][18].…”

“…A few recent studies reported the growth of GaN nanowires on Ti-films [11,12] and foils [13][14][15][16][17][18]. In most of these studies, a TiN layer was prepared before growing GaN nanowires [11][12][13][14][16][17][18]. While a TiN layer is not intentionally prepared before growing nanowires, it may form during the growth of GaN from the reaction between impinging N and Ti on the substrate.…”