Corrigendum: “Planar heating chuck to improve temperature uniformity of plasma processing equipment” [Jpn. J. Appl. Phys. 59, SJJD01 (2020)]

Im, Donghyeok; Min, Woo-Sig; Hong, Sang Jeen

doi:10.35848/1347-4065/aba074

Cited by 3 publications

(1 citation statement)

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“…Therefore, in particular, low-temperature plasma technology is required for anisotropic high-level etch processing such as deep-and-narrow contact hole etching [4][5][6][7][8][9][10]. Because this process is sensitive to even a small change in plasma parameters, research on the chamber structure or process recipe has been continuously conducted to overcome this problem [9][10][11][12][13][14][15][16]. Nevertheless, in high aspect ratio contact hole etching, which requires high-ion energy, there are still many defects that damage chamber components.…”

Section: Introductionmentioning

confidence: 99%

Characterization of an Etch Profile at a Wafer Edge in Capacitively Coupled Plasma

Seong

Lee²,

Kim

et al. 2022

Nanomaterials

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Recently, the uniformity in the wafer edge area that is normally abandoned in the fabrication process has become important for improving the process yield. The wafer edge structure normally has a difference of height between wafer and electrode, which can result in a sheath bend, distorting important parameters of the etch, such as ionic properties, resulting in nonuniform etching. This problem nowadays is resolved by introducing the supplemented structure called a focus ring on the periphery of the wafer. However, the focus ring is known to be easily eroded by the bombardment of high-energy ions, resulting in etch nonuniformity again, so that the focus ring is a consumable part and must be replaced periodically. Because of this issue, there are many simulation studies being conducted on the correlation between the sheath structural characteristics and materials of focus rings to find the replacement period, but the experimental data and an analysis based on this are not sufficient yet. In this study, in order to experimentally investigate the etching characteristics of the wafer edge area according to the sheath structure of the wafer edge, the etching was performed by increasing the wafer height (thickness) in the wafer edge area. The result shows that the degree of tilt in the etch profile at the wafer edge and the area where the tilt is observed severely are increased with the height difference between the wafer and electrode. This study is expected to provide a database for the characteristics of the etching at the wafer edge and useful information regarding the tolerance of the height difference for untilted etch profile and the replacement period of the etch ring.

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Section: Introductionmentioning

confidence: 99%

Characterization of an Etch Profile at a Wafer Edge in Capacitively Coupled Plasma

Seong

Lee²,

Kim

et al. 2022

Nanomaterials

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Wafer heating uniformity: enhancement using toroidal slot antennas and resonant cavity modes

Jung,

Kim,

et al. 2024

J. Phys. D: Appl. Phys.

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Atomic layer processing technology has advanced significantly since semiconductor devices have evolved from 2D to 3D stacked structures. Creating a uniform temperature distribution across the entire wafer during repeated heating and cooling cycles is an important aspect of atomic layer processing. Conventional embedded heaters rely on thermal conduction, resulting in slow heating rates. This can delay the cycle time of atomic layer processes, where rapid temperature changes are crucial. To overcome these problems, this study adopted a method to directly heat the wafer using gigahertz band microwaves. While there has been research on the heating mechanisms and effects of microwave irradiation on Si Wafers, studies on uniformity are lacking. Microwave heating depends on the distribution of the field, thus this study presents methods for improving uniformity by optimizing the antennas and controlling the cavity modes. A 2.45 GHz microwave was propagated in the TE10 mode in a WR-340 waveguide and radiated into the chamber through a slot located on a toroidal antenna designed for uniform heating. The radiated microwaves formed cavity modes within the chamber, thereby heating the 300 mm wafer. The wafer temperature was measured using a fiber Bragg grating sensor array; the heating rate at the top and back of the wafer was 6.5 °C /kW/s, and the within-wafer non-uniformity was 11.68 % and 10.94 %, respectively, after applying 500 W power for 60 s. A comparison of the temperature characteristics of the top and back sides of the wafer indicated no significant differences in uniformity, heating rate, and temperature profile. Based on these findings, it is anticipated that in atomic layer processes, where temperature control is crucial, the proposed method could reduce the process time and increase yield.

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Synthesis of an effective interlayer between a functional oxide film and Si<sub>3</sub>N<sub>4</sub> substrate

Tsuruta,

Masuda,

Murayama

2023

J. Ceram. Soc. Japan

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Laminated CuO/Al 2 CuO 4 /CuO layers were developed to serve as an interlayer between the conducting oxide CaCu 3 Ru 4 O 12 + 30 vol.% CuO and nitride substrate Si 3 N 4 . Screen-printing was used to fabricate these films. The Al 2 CuO 4 layer impeded the chemical reaction between CaCu 3 Ru 4 O 12 and Si 3 N 4 and hence suppressed the decomposition of CaCu 3 Ru 4 O 12 . The CuO interlayers improved the adhesion between the Si 3 N 4 substrate, Al 2 CuO 4 layer, and CaCu 3 Ru 4 O 12 + 30 vol.% CuO film. The main difference between the CaCu 3 Ru 4 O 12 + 30 vol.% CuO film on the Si 3 N 4 and Al 2 O 3 substrates having the same interlayers was the presence of a small amount of RuO 2 (formed from decomposition of CaCu 3 Ru 4 O 12 ) and cracks in the film on the Si 3 N 4 substrate.The difference in the coefficients of thermal expansion between the Si 3 N 4 substrate, interlayers, and film caused cracks to appear when the temperature of the film decreased after sintering. The resistivities of the films on the Si 3 N 4 and Al 2 O 3 substrates were 7 and 3 m³•cm at 100 °C, respectively. The film on the Si 3 N 4 substrate exhibited higher resistivity than the film on the Al 2 O 3 substrate from room temperature to 600 °C. This is because the cracks on the film on the Si 3 N 4 substrate scattered the charge carriers. A decrease in crack width with increasing temperature was also observed, which in turn decreased the resistivity of the film with temperature. The conducting properties of the film developed in this work are adequate for practical applications. However, the interlayer can be further improved to obtain films with better performance. The major achievement of the present study is the development of an interlayer that suppresses the chemical reactions between the functional oxide and nitride substrate during high-temperature sintering.

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Corrigendum: “Planar heating chuck to improve temperature uniformity of plasma processing equipment” [Jpn. J. Appl. Phys. 59, SJJD01 (2020)]

Cited by 3 publications

References 0 publications

Characterization of an Etch Profile at a Wafer Edge in Capacitively Coupled Plasma

Characterization of an Etch Profile at a Wafer Edge in Capacitively Coupled Plasma

Wafer heating uniformity: enhancement using toroidal slot antennas and resonant cavity modes

Synthesis of an effective interlayer between a functional oxide film and Si<sub>3</sub>N<sub>4</sub> substrate

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