2023
DOI: 10.1016/j.solmat.2023.112254
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Corrigendum to “Inaccuracies in contact resistivity from the Cox–Strack method: A review” [Sol. Energy Mater. Sol. Cells 246 (2022) 111909]

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“…As a first step towards efficient contact formation, a low contact resistivity must be established for effective electron extraction from the c-Si to the Al. [4,45] To investigate the contact resistivity of the c-Si/a-Si:H(i)/SAM/Al contact, Cox and Strack method (CSM) [46,47] test structures were fabricated as illustrated in Figure 1a. In this measurement, the rear contact was formed by thermally evaporated silver (Ag) on highly doped n-type poly-Si.…”
Section: Resultsmentioning
confidence: 99%
“…As a first step towards efficient contact formation, a low contact resistivity must be established for effective electron extraction from the c-Si to the Al. [4,45] To investigate the contact resistivity of the c-Si/a-Si:H(i)/SAM/Al contact, Cox and Strack method (CSM) [46,47] test structures were fabricated as illustrated in Figure 1a. In this measurement, the rear contact was formed by thermally evaporated silver (Ag) on highly doped n-type poly-Si.…”
Section: Resultsmentioning
confidence: 99%
“…10 Dark current-voltage measurements were conducted at room temperature using a Keithley 2425 source meter. The contact resistivity was calculated using the Cox-Strack method, 57 utilizing n-type silicon substrates with a resistivity of ∼1 U cm and a rear phosphorus diffusion. To determine lm thicknesses and optical constants (refractive index n and absorption index k), variable-angle spectroscopic ellipsometry measurements (J.A.…”
Section: Film Characterizationmentioning
confidence: 99%