Corrosion properties of thermally annealed and co-sputtered nickel silicide thin films

Tam, Pui Lam; Cao, Yu; Jelvestam, U.; Nyborg, Lars

doi:10.1016/j.surfcoat.2011.08.004

Cited by 14 publications

(3 citation statements)

References 12 publications

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“…In the most cases, the investigations are performed for nickel-silicon thin films system. [34,35] According to the reported data, the microstructural changes at the nickel-silicon carbide interface starts after exceeding a temperature of about 500 °C. [39] On the direct contact area, the solid-state reaction between Ni and SiC occurs.…”

Section: Discussionmentioning

confidence: 93%

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Microstructural Evolution of Ni-SiC Composites Manufactured by Spark Plasma Sintering

Chmielewski

Zybała

Strojny-Nędza

et al. 2023

Metall Mater Trans A

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The presented paper concerns the technological aspects of the interface evolution in the nickel-silicon carbide composite during the sintering process. The goal of our investigation was to analyse the material changes occurring due to the violent reaction between nickel and silicon carbide at elevated temperatures. The nickel matrix composite with 20 vol pct SiC particles as the reinforcing phase was fabricated by the spark plasma sintering technique. The sintering tests were conducted with variable process conditions (temperature, time, and pressure). It was revealed that the strong interaction between the individual components and the scale of the observed changes depends on the sintering parameters. To identify the microstructural evolution, scanning electron microscopy, energy dispersive spectroscopy, transmission electron microscopy, X-ray diffraction, and Raman spectroscopy were used. The silicon carbide decomposition process progresses with the extension of the sintering time. As the final product of the observed reaction, new phases from the Ni-Si system and free carbon were detected. The step-by-step materials evolution allowed us to reveal the course of the reaction and the creation of the new structure, especially in the reaction zone. The detailed analysis of the SiC decomposition and formation of new components was the main achievement of the presented paper.

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Section: Discussionmentioning

confidence: 93%

“…At the shell of Sample 1, the SiC modes are not present, while three new modes appear near 1400, 1600, and 2700 cm À1 related to the presence of carbon. Moreover, a mode close to 2700 cm À1 [35] indicates the presence of carbon organized into a hexagonal structure (graphite).…”

Section: Raman Spectroscopymentioning

confidence: 99%

Microstructural Evolution of Ni-SiC Composites Manufactured by Spark Plasma Sintering

Chmielewski

Zybała

Strojny-Nędza

et al. 2023

Metall Mater Trans A

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“…Furthermore, the variation of the binding energy of the Ni L 2,3 edge between pure nickel and nickel silicides are known to be 0.1 ∼ 1.9 eV (from Ni to Ni 3 Si, Ni 31 Si 12 , Ni 2 Si, NiSi, NiSi 2 ). 23,24 The chemical shifts of the Ni L 2,3 edge between NiSi and NiSi 2 is only 0.7 eV. However, there is no standard material, such as pure nickel, to be used as a reference for energy calibration in the sample.…”

Section: Resultsmentioning

confidence: 99%

Characterization of Ultra-Thin Ni Silicide Film by Two-Step Low Temperature Microwave Anneal

Lee

Hsueh

et al. 2014

ECS J. Solid State Sci. Technol.

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A novel silicide process with two-step low temperature microwave annealing (MWA) achieves NiSi thickness of 10 nm while maintaining low resistance, and an ultra-thin Ni silicide film, only 4.5 nm, has been realized. In this MWA system, we insert quartz and Si susceptors to change the absorption efficiency of the process wafer and provide fine turning in temperature control during annealing. The thickness of NiSi film is determined by microwave power and by changing the number and the position of quartz and Si susceptors in the first step of the anneal process. The STEM-HAADF combined EELS/EDS spectroscopies are used to analyze the electronic excitations and identify the phase of Ni silicide.

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The oxidation process of NiSix film at high temperature in air and the antioxidant effect of SiOxNy/NiSix film

Zhang

Liu

Cui

et al. 2015

J Mater Sci: Mater Electron

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Corrosion properties of thermally annealed and co-sputtered nickel silicide thin films

Cited by 14 publications

References 12 publications

Microstructural Evolution of Ni-SiC Composites Manufactured by Spark Plasma Sintering

Microstructural Evolution of Ni-SiC Composites Manufactured by Spark Plasma Sintering

Characterization of Ultra-Thin Ni Silicide Film by Two-Step Low Temperature Microwave Anneal

The oxidation process of NiSix film at high temperature in air and the antioxidant effect of SiOxNy/NiSix film

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