Coster-Kronig transitions in hollow atoms created during highly charged ion-surface interactions

Limburg, J.; Das, J. N.; Schippers, S.; Hoekstra, Ronnie; Morgenstern, R.

doi:10.1103/physrevlett.73.786

Cited by 37 publications

(16 citation statements)

References 12 publications

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“…Speculations emerging from experimental evidence suggest that there may be technological applications of the highly charged ions as a new method for modifying or etching semiconductor or insulator surfaces. 26,[30][31][32][33][34][35][36] However, there is very little information about the Coulomb explosion process, which is proposed to be the main cause for surface damage. 26,37 In fact, it is only recently that clear evidence for the existence of surface Coulomb explosions induced by slow highly charged ions has been obtained.…”

Section: Experimental Backgroundmentioning

confidence: 99%

“…Electrons are captured into high-lying Rydberg levels, producing a superexcited ''hollow atom,'' which may be fully neutralized. [40][41][42][43]35 The atom can decay ͑collapse͒ towards its ground state via Auger cascade, ejecting electrons in the process, 26,34 or by other mechanisms such as radiative decay or surface plasmon formation. 45 Only if electrons are ejected fast enough and the ion approaches the surface slowly enough can electrons continue to be removed from the solid during the ion's approach.…”

Section: Modeling and Simulationsmentioning

confidence: 99%

“…Such an initial condition has been put forth by a number of researchers active in this field, 33,35,38,36 but to our knowledge this is the first time that the subsequent Coulomb explosion has been investigated at the atomic level by detailed simulations and calculations rather than simply depicted as an artist's conception. Since there is some evidence that the time scale for the electron emission from a surface can be very short, 26,34,40,48,44 we separate the dynamics of the surface explosion from the process of multielectron capture and Auger cascade, which leads to the initial conditions assumed here. This simplified model is supported by the evidence of fast Coster-Kronig transitions in ion-silicon surface interactions.…”

Section: Modeling and Simulationsmentioning

confidence: 99%

“…This simplified model is supported by the evidence of fast Coster-Kronig transitions in ion-silicon surface interactions. 34 Here, we focus on the dynamics of the surface atoms after a huge amount of repulsive electrostatic energy is suddenly deposited. The number of ions is chosen to be either 365 or 265.…”

Section: Modeling and Simulationsmentioning

confidence: 99%

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Nanoscale modification of silicon surfaces via Coulomb explosion

Cheng

Gillaspy

1997

Phys. Rev. B

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Coulomb explosions on silicon surfaces are studied using large-scale molecular-dynamics simulations. Processes under investigation begin by embedding a region consisting of 265-365 singly charged Si ϩ ions on a Si ͓111͔ surface. The repulsive electrostatic energy, initially stored in the charged region, leads to a local state with ultrahigh pressure and stress. During the relaxation process, part of the potential energy propagates into the surrounding region while the remainder is converted to kinetic energy, resulting in a Coulomb explosion. Within less than 1.0 ps, a nanometer-sized hole on the surface is formed. A full analysis of the density, temperature, pressure, and energy distribution as functions of time reveals the time evolution of physical properties of the systems related to the violent explosive event. A shock wave that propagates in the substrate is formed during the first stage of the explosion, 0ϽtϽ100 fs. The speed of the shock wave is twice the average speed of sound. After the initial shock the extreme nonequilibrium conditions leads to ultrarapid evaporation of Si atoms from the surface. Qualitatively similar features are observed on a smaller scale when the number of initial surface charges is reduced to 100. Our simulations demonstrate the details of a process that can lead to permanent structure on a semiconductor surface at the nanoscale level. The work reported here provides physical insights for experimental investigations of the effects of slow, highly charged ions (Q Ͼ40, e.g.͒ on semiconductor materials.

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Section: Experimental Backgroundmentioning

confidence: 99%

Section: Modeling and Simulationsmentioning

confidence: 99%

Section: Modeling and Simulationsmentioning

confidence: 99%

Section: Modeling and Simulationsmentioning

confidence: 99%

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Nanoscale modification of silicon surfaces via Coulomb explosion

Cheng

Gillaspy

1997

Phys. Rev. B

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“…The hollow atoms originate when slow multicharged ions neutralize in front of a surface (see, e.g., Refs. [7][8][9][10][11]). The neutralization of a multiply charged ion approaching a (metallic) surface can be described by the classical over-the-barrier model [7] in which the electron transfer between the solid and the ion occurs at a distance where the potential barrier between the surface and the projectile is lowered to the Fermi level.…”

mentioning

confidence: 99%

Local Spin Polarization at Surfaces Probed by Hollow Atoms

et al. 2006

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The relaxation of hollow atoms produced by slow multiply charged ions impinging on surfaces produces characteristic Auger electron spectra. These spectra, which serve as fingerprints of the interaction, can be used to probe local spin ordering at surfaces by relating changes in the intensities of different spin states to local spin polarization at the surface. The area from which the electrons are captured is of the order of a few Angstrom(2), only. The potential of the method is illustrated by He(2+) and N(6+) ions interacting with a ferromagnetic Ni(110) crystal. From the Auger spectra we determine a spin polarization of approximately 90% at room temperature.

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Density Functional Theory with Optimized Effective Potential: An Application to Hollow Atoms in the Bulk of Metallic Materials

Tong¹,

Kato²,

Watanabe

et al. 2001

J Chinese Chemical Soc

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The local spin‐density functional theory with an optimized effective potential and self‐interaction correction is used to study the energy structure of hollow atoms or ions in the bulk of metallic materials. The energy structure of conduction electrons in the bulk of metallic material is treated by the jellium model. Based on this method, we have studied the emit ted x‐ray spectra of Arq+ hollow atoms and ions in the bulk of Ag as well as in the vacuum. By comparing the energy spectra of Arq+ hollow atoms or ions in the vacuum and in the bulk of Ag, we can illustrate the conduction electron screening effect. Our calculated x‐ray spectra of Arq+ hollow atoms or ions in the bulk of Ag is in reasonable agreement with the experiment.

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Coster-Kronig transitions in hollow atoms created during highly charged ion-surface interactions

Cited by 37 publications

References 12 publications

Nanoscale modification of silicon surfaces via Coulomb explosion

Nanoscale modification of silicon surfaces via Coulomb explosion

Local Spin Polarization at Surfaces Probed by Hollow Atoms

Density Functional Theory with Optimized Effective Potential: An Application to Hollow Atoms in the Bulk of Metallic Materials

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