Cotunneling-Tolerant Single-Electron Logic

Simulation of charge transport in multi-island tunneling devices: Application to disordered one-dimensional systems at low and high biases

“…6 While intense experimental research has been ongoing, continued development of robust simulation tools has been lacking for multi-island SED devices. A few fairly robust tools have been developed for the simulations of SED and SET circuits [7][8][9][10][11] for which independent knowledge of the electrical circuit parameters, namely, junction resistances and capacitances, is required. The utility of these tools is rather limited for studying SEDs as a function of more direct physical characteristics such as geometrical structures (e.g., the shapes, sizes and spacing of the islands, and some degree of randomness in these parameters), and the material properties of the constituent parts (e.g., the work functions of the islands, the dielectric properties of the substrate and the tunnel junctions, etc).…”

Simulating Hybrid Circuits of Single-Electron Transistors and Field-Effect Transistors

“…Other SPICE models for single-electron transistors also exist. These models are either phenomenological models, 7) simplifications of the orthodox theory of single-electron tunneling, [8][9][10] or they use extensions of SPICE that are not generic to all versions of SPICE. 11) Here we describe an implementation of the full orthodox theory that uses only the capabilities in publicly available versions of SPICE.…”

Analysis of multiphase clocked electron pumps consisting of single-electron transistors

“…Each MTJ transistor, therefore, may be regarded as being voltage-biased with relevant island potential͑s͒ i and side-gate bias V gi . 10,18,19 We approximate each MTJ transistor with a two-junction single-electron transistor 20,21 as shown in Fig. 1͑b͒.…”