Coulomb blockade in a silicon tunnel junction device

Ali, D.; Ahmed, H.

doi:10.1063/1.111702

Cited by 89 publications

(29 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…1,2 SETs based on silicon are advantageous for incorporation into established CMOS fabrication lines, and devices have been reported in crystalline material, particularly silicon-on-insulator. These use either lithographically defined islands 3,4 or multipletunnel junctions created by material/structural disorder effects. 5,6 By contrast, polycrystalline silicon has been somewhat neglected for SET applications despite a greater flexibility of fabrication.…”

Section: ͓S0003-6951͑98͒02534-0͔mentioning

confidence: 99%

Single-electron effects in heavily doped polycrystalline silicon nanowires

Irvine

Durrani

Ahmed

et al. 1998

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

Section: ͓S0003-6951͑98͒02534-0͔mentioning

confidence: 99%

Single-electron effects in heavily doped polycrystalline silicon nanowires

Irvine

Durrani

Ahmed

et al. 1998

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…Single-electron devices such as single-electron transistors (SETs), based on SiNWs, have been defined using various approaches [11][12][13]. A widely investigated approach is to pattern a NW along its length, using either constrictions [22][23][24][25] or pattern dependent oxidation (PADOX) [15,26]. The later technology utilises areas of increased stress, e.g.…”

Section: Silicon Nanowiresmentioning

confidence: 99%

Single-electron and quantum confinement limits in length-scaled silicon nanowires

2015

View full text Add to dashboard Cite

Quantum-effects will play an important role in both future CMOS and 'beyond CMOS' technologies. By comparing single-electron transistors formed in unpatterned, uniform-width silicon nanowire devices with core widths from ~5 -40 nm, and gated lengths of 1 µm and ~50 nm, we show conditions under which these effects become significant. Coulomb blockade drain-source current-voltage characteristics, and single-electron current oscillations with gate voltage have been observed at room temperature. Detailed electrical characteristics have been measured from 8 -300 K.We show that while shortening the nanowire gate length to 50 nm reduces the likelihood of quantum dots to only a few, it increases their influence on the electrical characteristics. This highlights explicitly both the significance of quantum effects for understanding the electrical performance of nominally 'classical' SiNW devices and also their potential for new quantum effect 'beyond CMOS' devices. a) Electronic mail: z.durrani@imperial.ac.uk 2

show abstract

“…2 In order to investigate fundamental quantum phenomena, Si quantum wires and dots have been fabricated. [3][4][5] Regarding the fabrication processes which are compatible with the present Si technology, methods utilizing crystallographic anisotropy of Si have been proposed to design uniform Si nanostructures. [6][7][8] However, it is strongly desirable to develop an alternate fabrication process for designing the required nanostructures which cannot be obtained by utilizing such a crystallographic orientation.…”

Section: Introductionmentioning

confidence: 99%