2005
DOI: 10.1103/physrevlett.95.116806
|View full text |Cite
|
Sign up to set email alerts
|

Coulomb Promotion of Spin-Dependent Tunneling

Abstract: We study transport of spin-polarized electrons through a magnetic single-electron transistor (SET) in the presence of an external magnetic field. Assuming the SET to have a nanometer size central island with a single-electron level we find that the interplay on the island between coherent spin-flip dynamics and Coulomb interactions can make the Coulomb correlations promote rather than suppress the current through the device. We find the criteria for this new phenomenon--Coulomb promotion of spin-dependent tunn… Show more

Help me understand this report
View preprint versions

Search citation statements

Order By: Relevance

Paper Sections

Select...
5

Citation Types

1
34
0

Year Published

2009
2009
2022
2022

Publication Types

Select...
6

Relationship

2
4

Authors

Journals

citations
Cited by 39 publications
(35 citation statements)
references
References 14 publications
1
34
0
Order By: Relevance
“…One of the remarkable consequences is the Coulomb promotion of spin-dependent tunneling predicted in Ref. 47. In this work a strong voltage dependence of the spin-flip relaxation rate on a quantum dot was demonstrated.…”
Section: Amentioning
confidence: 82%
See 4 more Smart Citations
“…One of the remarkable consequences is the Coulomb promotion of spin-dependent tunneling predicted in Ref. 47. In this work a strong voltage dependence of the spin-flip relaxation rate on a quantum dot was demonstrated.…”
Section: Amentioning
confidence: 82%
“…It was shown in Ref. 47 that by lifting the Coulomb blockade one stimulates occupation of both spin-up and spin-down states thus suppressing spinflip relaxation on the dot. In magnetic devices with highly spin-polarized electrons electronic spin-flip can be the only mechanism providing charge transport between oppositely magnetized leads.…”
Section: Amentioning
confidence: 99%
See 3 more Smart Citations