Coupled ferroelectricity and superconductivity in bilayer Td-MoTe2

Jindal, Apoorv; Saha, Amartyajyoti; Li, Zizhong; Taniguchi, Takashi; Watanabe, Kenji; Hone, James; Birol, Turan; Fernandes, Rafael M.; Dean, Cory; Pasupathy, Abhay; Rhodes, Daniel

doi:10.1038/s41586-022-05521-3

Cited by 100 publications

(87 citation statements)

References 48 publications

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“…In 2017, we proposed that for most non‐ferroelectric 2D materials, certain stacking of bilayer or multilayer may break the symmetry and give rise to so‐called sliding ferroelectricity, where the vertical polarizations are switchable via in‐plane translation, i.e., interlayer sliding. [ 2 ] Over the next few years, such ferroelectricity have been experimentally detected in bilayer or multilayer BN, [ 3–5 ] transition‐metal dichalcogenides (TMDs) like WTe 2 , [ 6–9 ] MoS 2 , [ 10–16 ] MoTe 2 , [ 17 ] ReS 2 , [ 18 ] InSe [ 19 ] and even multiwall nanotubes, [ 20 ] and amphidynamic crystal. [ 21 ] This mechanism is applicable to most 2D materials except for mono‐element systems like graphene and phosphorene, as the inversion symmetry of their bilayers can always be maintained at any interlayer‐sliding vector.…”

Section: Introductionmentioning

confidence: 99%

“…transition-metal dichalcogenides (TMDs) like WTe 2 , [6][7][8][9] MoS 2 , [10][11][12][13][14][15][16] MoTe 2 , [17] ReS 2 , [18] InSe [19] and even multiwall nanotubes, [20] and amphidynamic crystal. [21] This mechanism is applicable to most 2D materials except for mono-element systems like graphene and phosphorene, as the inversion symmetry of their bilayers can always be maintained at any interlayersliding vector.…”

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confidence: 99%

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Across‐Layer Sliding Ferroelectricity in 2D Heterolayers

Yang

2023

Adv Funct Materials

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Although the monolayers of most 2D materials are non-ferroelectric with highly symmetric lattices, symmetry breaking may take place in their bilayers upon some stacking configuration, giving rise to so-called sliding ferroelectricity where the vertical polarizations can be electrically reversed via interlayer translation. However, it is not supposed to appear in systems like graphene bilayer with centro-symmetry at any stacking configuration, and the origin of the recently reported ferroelectricity (Nature 2020, 588, 71) in graphene bilayer intercalated between h-BN remains mysterious. Here, a type of across-layer sliding ferroelectricity that arises from the asymmetry of next-neighbor interlayer couplings is proposed. The first-principles evidence is shown that the vertical polarizations in intercalated centro-symmetric 2D materials like graphene bilayer can be switched via multilayer sliding, which is likely to be the origin of the observed ferroelectric hysteresis. Moreover, such ferroelectricity may exist in a series of other heterolayers with quasidegenerate polar states, like graphene bilayer or trilayer on BN substrate, or even with a molecule layer on surface where each molecule can store 1-bit data independently, resolving the bottleneck issue of sliding ferroelectricity for high-density data storage.

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Section: Introductionmentioning

confidence: 99%

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confidence: 99%

Across‐Layer Sliding Ferroelectricity in 2D Heterolayers

Yang

2023

Adv Funct Materials

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“…[19,20] Furthermore, in addition to these fascinating topological nontrivial phases, superconductivity has also been discovered in (W,Mo)Te 2 , [7,21,22] which offers great opportunities to extensively study long-expected topological superconductivity and profound physics consisting of topology [8][9][10]13,14,23,24] and superconductivity. [7,19,[25][26][27][28][29][30][31][32][33][34][35][36][37][38][39] Superconductivity induced in WTe 2 and MoTe 2 requires harsh conditions of either high pressure [21,22] or extremely low temperature because the superconducting critical temperature (T c ) of MoTe 2 is only ≈0.1 K under ambient pressure. [7] These stringent external conditions have severely hampered the investigation of topological superconductivity for potential applications.…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Enhanced Superconductivity and Upper Critical Field in Ta‐Doped Weyl Semimetal T_d‐MoTe₂

et al. 2023

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2D transition metal dichalcogenides are promising platforms for next‐generation electronics and spintronics. The layered Weyl semimetal (W,Mo)Te2 series features structural phase transition, nonsaturated magnetoresistance, superconductivity, and exotic topological physics. However, the superconducting critical temperature of the bulk (W,Mo)Te2 remains ultralow without applying a high pressure. Here, the significantly enhanced superconductivity is observed with a transition temperature as large as about 7.5 K in bulk Mo1−xTaxTe2 single crystals upon Ta doping (0 ≤ x ≤ 0.22), which is attributed to an enrichment of density of states at the Fermi level. In addition, an enhanced perpendicular upper critical field of 14.5 T exceeding the Pauli limit is also observed in Td‐phase Mo1−xTaxTe2 (x = 0.08), indicating the possible emergence of unconventional mixed singlet–triplet superconductivity owing to the inversion symmetry breaking. This work provides a new pathway for exploring the exotic superconductivity and topological physics in transition metal dichalcogenides.

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“…In sliding ferroelectrics, the polarization is confined to the interface, while the electric conductivity is provided by the migration of free carriers along the individual layer. The decoupling between ferroelectricity and conductivity in sliding ferroelectricity results in an abundance of physical phenomena such as a switchable superconductor, , switchable Moiré potentials, and nonvolatile memory . Such extraordinary physical phenomena associated with switchable electric dipoles exhibit great prospects in novel devices featured with in-memory computing.…”

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confidence: 99%

High-Performance Sliding Ferroelectric Transistor Based on Schottky Barrier Tuning

Bian

Cao²,

Pan

et al. 2023

Nano Lett.

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Sliding ferroelectricity associated with interlayer translation is an excellent candidate for ferroelectric device miniaturization. However, the weak polarization gives rise to the poor performance of sliding ferroelectric transistors with a low on/off ratio and a narrow memory window, which restricts its practical application. To address the issue, we propose a facile strategy by regulating the Schottky barrier in sliding ferroelectric semiconductor transistors based on γ-InSe, in which a high performance with a large on/off ratio (10 6 ) and a wide memory window (4.5 V) was ultimately acquired. Additionally, the memory window of the device can be further modulated by electrostatic doping or light excitation. These results open up new ways for designing novel ferroelectric devices based on emerging sliding ferroelectricity.

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Coupled ferroelectricity and superconductivity in bilayer Td-MoTe2

Cited by 100 publications

References 48 publications

Across‐Layer Sliding Ferroelectricity in 2D Heterolayers

Across‐Layer Sliding Ferroelectricity in 2D Heterolayers

Enhanced Superconductivity and Upper Critical Field in Ta‐Doped Weyl Semimetal T_d‐MoTe₂

High-Performance Sliding Ferroelectric Transistor Based on Schottky Barrier Tuning

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Coupled ferroelectricity and superconductivity in bilayer Td-MoTe2

Cited by 100 publications

References 48 publications

Across‐Layer Sliding Ferroelectricity in 2D Heterolayers

Across‐Layer Sliding Ferroelectricity in 2D Heterolayers

Enhanced Superconductivity and Upper Critical Field in Ta‐Doped Weyl Semimetal Td‐MoTe2

High-Performance Sliding Ferroelectric Transistor Based on Schottky Barrier Tuning

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Product

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Enhanced Superconductivity and Upper Critical Field in Ta‐Doped Weyl Semimetal T_d‐MoTe₂