Coupled optical and electrical study of thin-film InGaAs photodetector integrated with surface InP Mie resonators

Abstract

High-index dielectric and semiconductor nanostructures with characteristics of low absorption loss and artificially controlled scattering properties have grasped an increasing attention for improving the performance of thin-film photovoltaic devices. In this work, combined optical and electrical simulations were performed for thin-film InP/In0.53Ga0.47As/InP hetero-junction photodetector with periodically arranged InP nano-cylinders in the in-coupling configuration. It is found that the carefully designed InP nano-cylinders possess strongly substrate-coupled Mie resonances and can effectively couple incident light into the guided mode, both of which significantly increase optical absorption. Further study from the electrical aspects shows that enhancement of external quantum efficiency is as high as 82% and 83% in the configurations with the optimized nano-cylinders and the optimized period, respectively. Moreover, we demonstrate that the integration of InP nano-cylinders does not degrade the electrical performance, since the surface recombination is effectively suppressed by separating the absorber layer where carriers generate and the air/semiconductor interface. The comprehensive modeling including optical and electrical perspectives provides a more practical description for device performance than the optical-only simulation and is expected to advance the design of thin-film absorber layer based optoelectronic devices for fast response and high efficiency.

All-Dielectric Color Filters Using SiGe-Based Mie Resonator Arrays

“…This work has led to a host of innovative applications in domains such as sensing and photovoltaics where efficient light trapping is required 5,6,7,8 . Of particular note in this area is the substrate-coupling phenomenon, whereby MRs are able to channel optical energy from the ambient towards a bulk material by the extension of the resonantly confined fields into the substrate, as this mechanism forms the crux of the required "trapping" behaviour 9,10 . Furthermore, modifying geometric properties of the MRs allows for control over the light-matter interaction, beginning with the well-known interplay between the resonant wavelengths and the size and refractive index of the MRs 11,12 .…”

“…Light management using dielectric Mie resonators (MRs), particularly silicon nanoparticles, has been the subject of intense interest in the literature for the past decade. − This work has led to a host of innovative applications in domains such as sensing and photovoltaics where efficient light trapping is required. − Of particular note in this area is the substrate-coupling phenomenon, whereby MRs are able to channel optical energy from the ambient toward a bulk material by the extension of the resonantly confined fields into the substrate, as this mechanism forms the crux of the required “trapping” behavior. , Furthermore, modifying geometric properties of the MRs allows for control over the light–matter interaction, beginning with the well-known interplay between the resonant wavelengths and the size and refractive index of the MRs. , More complex examples include the coupling of two or more resonators allowing for polarization-sensitive interactions , and controlling the morphology of the MRs to determine the angular selectivity of the so-formed metasurfaces. , We note also that due to their low loss at visible and NIR optical frequencies, all-dielectric Mie resonators are fast surpassing plasmonics as the dominant technique for managing light-matter interactions at subwavelength scales.…”

Mie-Type Surface Texture-Integrated Visible and Short-Wave Infrared InGaAs/InP Focal Plane Arrays

“…Apart from applications in space remote sensing, the vis–SWIR InGaAs FPAs are emerging as a very powerful technology for novel applications such as medical diagnostics and polarization imaging. − However, the sensitivities of the commercial vis–SWIR InGaAs FPAs are currently inferior to that of the silicon cameras in the wavelength range of 0.5–0.9 μm. , Because of the lower surface recombination velocity among III–V semiconductors, InP has been demonstrated to be an ideal substrate to integrate with Mie resonator arrays. , Improved light absorption and photoelectric conversion in the photocathodes for solar hydrogen production have been observed . For the backside-illuminated InGaAs PIN FPAs with a spectral response of 1–1.7 μm, periodically arranged InP Mie resonators can restrain the deleterious multiple reflection of scattered light and enhance the light absorption in the InGaAs absorber, from which enhanced quantum efficiencies and image quality can be expected. However, to integrate an InP Mie resonator on the backside surfaces of a vis–SWIR InGaAs FPA is difficult.…”

“…6,23 Improved light absorption and photoelectric conversion in the photocathodes for solar hydrogen production have been observed. 7 For the backside-illuminated InGaAs PIN FPAs with a spectral response of 1−1.7 μm, periodically arranged InP Mie resonators can restrain the deleterious multiple reflection of scattered light and enhance the light absorption in the InGaAs absorber, 12 the incident lights between 0.5 and 0.9 μm are lost before reaching the InGaAs absorber because of the strong absorption in the InP contact layer. 6 Second, the Mie resonators have to be tailored for broadband antireflection operation between 0.5 and 1.7 μm.…”