Coupled quantum dot–ring structures by droplet epitaxy

Somaschini, Claudio; Bietti, Sergio; Koguchi, N.; Sanguinetti, S.

doi:10.1088/0957-4484/22/18/185602

Cited by 71 publications

(58 citation statements)

References 30 publications

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“…2(a)], confirming the presence of carbon in the sample. 25 The average full-width at half maximum of Peak 1 to Peak 3 (from 2 to 21 K) is 10 meV, which is comparable to or lower than the best values reported in the literature for GaAs/Al x Ga 1−x As QDs, [26][27][28] indicating highly uniform dots. The high uniformity is demonstrated by the AFM image of surface dots shown in Fig.…”

supporting

confidence: 64%

Phonon bottleneck in GaAs/AlxGa1−xAs quantum dots

et al. 2015

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We report low-temperature photoluminescence measurements on highly-uniform GaAs/AlxGa1−xAs quantum dots grown by droplet epitaxy. Recombination between confined electrons and holes bound to carbon acceptors in the dots allow us to determine the energies of the confined states in the system, as confirmed by effective mass calculations. The presence of acceptor-bound holes in the quantum dots gives rise to a striking observation of the phonon-bottleneck effect.

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supporting

confidence: 64%

Phonon bottleneck in GaAs/AlxGa1−xAs quantum dots

et al. 2015

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“…The TEM top views of islands from sample A, obtained with diffraction vector g = [2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20] clearly show Moiré fringes, due to the interference between the crystal lattice of the island (GaAs) and that the Si substrate ( Figure 11). EDS map scans show the same distribution of the Ga and As signals, which mimics the island shape, thus demonstrating the correct stoichiometry of the GaAs all over the island volume -i.e.…”

Section: Mullins Sekerka Instabilitymentioning

confidence: 99%

Unified model of droplet epitaxy for compound semiconductor nanostructures: Experiments and theory

et al. 2013

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We present a unified model of compound semiconductor growth based on kinetic Monte Carlo simulations in tandem with experimental results that can describe and predict the mechanisms for the formation of various types of nanostructures observed during droplet epitaxy. The crucial features of the model include the explicit and independent representation of atoms with different species and the ability to treat solid and liquid phases independently. Using this model, we examine nanostructural evolution in droplet epitaxy. The model faithfully captures several of the experimentally observed structures, including compact islands and nanorings. Moreover, simulations show the presence of Ga/GaAs core-shell structures that we validate experimentally. A fully analytical model of droplet epitaxy that explains the relationship between growth conditions and the resulting nanostructures is presented, yielding key insight into the mechanisms of droplet epitaxy.

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“…A III-column element molecular beam is initially supplied for the formation of droplets on the substrate surface in vacuum, and subsequently an As flux is used for the crystallization of droplets into the III-As nanostructures. With a suitable selection of growth conditions, and by carefully controlling the group-III crystallization kinetics into a III-V semiconductor, it is possible to engineer the final shape of the nanocrystals from islands [25,[27][28][29], rings [30,31], wires [32,33], and even more complex structures [34][35][36][37][38][39].…”

Section: Introductionmentioning

confidence: 99%

Precise shape engineering of epitaxial quantum dots by growth kinetics

et al. 2015

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We show that independent size and morphology engineering of epitaxial quantum dots can be obtained using a kinetically controlled quantum dot fabrication procedure, namely droplet epitaxy. Due to the far-from-equilibrium droplet epitaxy procedure, which is based on the crystallization, under As flux, of a nanometric droplet of Ga, independent and precise tuning of quantum dot size, aspect ratio, and faceting can be achieved. The dependence of the dot morphology on the growth conditions is interpreted and described quantitatively through a model that takes into account the crystallization kinetics of the Ga stored in the droplet under As flux.

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Coupled quantum dot–ring structures by droplet epitaxy

Cited by 71 publications

References 30 publications

Phonon bottleneck in GaAs/AlxGa1−xAs quantum dots

Phonon bottleneck in GaAs/AlxGa1−xAs quantum dots

Unified model of droplet epitaxy for compound semiconductor nanostructures: Experiments and theory

Precise shape engineering of epitaxial quantum dots by growth kinetics

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